“Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs”, discussed at SISC, 2006.

“Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics,” International symposium on the physical and failure analysis of integrated circuits, p.21,2004


“High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation,” Proceeding of Symposium VLSI Technology, p.15, 2001. (Highlight session paper)


“Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å),” Tech Dig. of Int. Electron Device Meetings, p.61, 2000.