“The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs Under Various Gate Stress Conditions”, Proc. of Int. Electron Device Meeting, p.115, 2008.

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“Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics”, Proc. of Int. Rel. Phys. Symp., 2008.

“Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, 2007.

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“nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2,” Ext. Abs. of SSDM, p.250, 2007. (recognized as a highly notable paper in 2007)

“Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics”, Proc. of Symp. on VLSI Tech., p.68, 2007.

“Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” Tech. Dig. of IEDM, 2006.

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