Utilizing the state-of-art electrical characterization equipment, EXEL lab explores novel characterization methods and reliability physics for most scaled silicon devices, together with industrial partners.
- Intrinsic reliability of high-k dielectric
- Short pulse I-V analysis of scaled MOSFETs
- Time domain reflectometry for leaky dielectric
- Optical charge pumping for scaled MOSFET
We aim to overcome the weakness of graphene MOSFETs and MoS2MOSFETs (hysteresis, variability etc) by understanding the sources of instabilities and variability of graphene devices and MoS2 devices. Based on the most advanced understanding on the device physics, we also explore many new graphene based devices and sensors.
- Novel electrical characterization methods for graphene MOSFET
- Novel processes to enhance and stabilize graphene MOSFETs
- Study on the device physics of MoS2 MOSFETs
- Ferroelectric/ Graphene High Speed/ multi-bit Memory
- Piezoelectric/ Graphene Touch Sensor
- Processes for graphite/Cu interconnect
- Graphene/MoS2tunnel FET
- Graphene barrister and derivative devices
- Graphene photodetector for optical interconnect
- Passive devices using graphene
Novel Electronic Devices and Architectures
The power consumption of current CMOS products has reached the level where bipolar devices were replaced by CMOS devices. Even though CMOS products are still usable due to the progress in power management technologies, a major shift in the device technology and information processing architecture is unavoidable to overcome the power consumption problem.
- Semi-empirical modeling of novel device and circuit simulation
- Neuromorphic device using various memristors
- 3D integration of 2D chalcogenide based devices using roll to plate process
- Ternary logic device using graphene and ferroelectric switch
Eventually, we aim to contribute to the realization of dynamically reconfigurable devices and biomorphic architecture that can save the power consumption in the information processing by more than 1/1000.