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J.J. Peterson, C. D. Young, J. Barnett, S. Gopalan, J. Gutt, C.H. Lee, H.J. Li, T.HH. Hou, Y . Kim, C. Lim, N. Chaudhary, N. Moumen, B. H. Lee, G. Bersuker, G. Brown, P. Zeitzoff, M. Gardner, R. Murto, and H.Huff, "Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks,” Electrochemical and Solid-State Letters, 7, No. 8, G164, (2004)

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S. Zafar, B. H. Lee, and J. Stathis, “Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates”, IEEE Electron Dev. Lett., v.25, p153, (2004)
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K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong and H. -S. P. Wong, “Strained Si CMOS (SS CMOS) technology: opportunities and challenges” Solid-State Electron. 47, 7, p.1133, (2003)
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Y.J. Cho, N.V.Nguyen, C.A.Richter, J.R.Ehrstein, B. H. Lee, and Jack C.Lee, “Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties”, Appl. Phys. Lett. 80, p.1249, (2001)
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W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee , “Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application”, Appl. Phys. Lett. 77, p.3269, (2000)
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W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee,"Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application,” Appl. Phys. Lett. 77, p.1704, (2000)
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L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee, " Electrical Characteristics of Highly Reliable Ultrathin Hafnium Oxide Gate Dielectric”, IEEE Electron Dev. Lett., 21,p.181, (2000)
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B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee, "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing”, Appl. Phys. Lett. 76, p.1926, (2000) (First journal paper on thin HfO2 gate dielectric, cited more than 750 times)
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B. H. Lee, Y. Jeon, K. Zawadzki, W. Qi and J. C. Lee, "Effect of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon”, Appl. Phys. Lett. 74, p.3143, (1999)
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G. Cha, B. H. Lee, K. W. Lee, G. J. Bae, W. D. Kim, J. H. Lee, I. K. Kim, K. C. Park, S. I. Lee and Y. B. Koh, "Design Considerations for Patterned Wafer Bonding,” Jpn. J. Appl. Phys., 36, p.1912-1916, (1997)
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J.M. Leng, J.J. Sidorowich, Y.D. Yoon, J. Opsal, B. H. Lee, G. Cha, J. Moon, and S.I. Lee, "Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry,” J. Appl. Phys. 8, p.3570, (1997)