R. Choi, B. H. Lee, C.D. Young, J.H. Sim, and G. Bersuker, “Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric”, Jpn. J. of Appl. Phys., 44, 4B, p.2201, (2005)
J. Barnett, C.D. Young, N,Moumen, G.Bersuker, J.J.Peterson, G.A. Brown, B.H.Lee, H.R.Huff, "Enhanced surface preparation technique for the Si/high-k interface", Diffusion and Defect data pt.B: Solid state pheonomena, 103-104, pp.11-14, (2005).
M.S. Akbar, N. Moumen, J. Barnett, B. H. Lee e and J.C. Lee, “Mobility Improvement After HCl Post-Deposition Cleaning of High-k dielectric, A Potential Issue in Wet Etching of Dual Metal Gate Process Technology”, IEEE Elect. Dev. Lett., 26, p.163, (2005)
R. Choi, S.J. Rhee, B. H. Lee, J. C. Lee, and G. Bersuker, “Charge Trapping and Detrapping Characteristics in Hafnium Silicate Gate Stack Under Static and Dynamic Stress”, IEEE Elect. Dev. Lett., 26, p.197, (2005)
G. Bersuker, J. Barnett, N. Moumen, S. Stemmer, M. Agustin, B. Foran, C. D. Young, P. Lysaght, B. H. Lee, Peter M. Zeitzoff, and H. R. Huff, “Interfacial Layer-Induced Mobility Degradation in High-k Transistors”, Jpn. J. Appl. Phys., 43, p.7899, (2004)
G.Bersuker, J.H.Sim, C.D.Young, R.Choi, P.M.Zeitzoff, G.A.Brown, B. H. Lee, R.W.Murto, “Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics”, Microelectronics reliability, 44, p.1509, (2004)

J.J. Peterson, C. D. Young, J. Barnett, S. Gopalan, J. Gutt, C.H. Lee, H.J. Li, T.HH. Hou, Y . Kim, C. Lim, N. Chaudhary, N. Moumen, B. H. Lee, G. Bersuker, G. Brown, P. Zeitzoff, M. Gardner, R. Murto, and H.Huff, "Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks,” Electrochemical and Solid-State Letters, 7, No. 8, G164, (2004)

S. Zafar, B. H. Lee, and J. Stathis, “Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates”, IEEE Electron Dev. Lett., v.25, p153, (2004)
K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong and H. -S. P. Wong, “Strained Si CMOS (SS CMOS) technology: opportunities and challenges” Solid-State Electron. 47, 7, p.1133, (2003)
Y.J. Cho, N.V.Nguyen, C.A.Richter, J.R.Ehrstein, B. H. Lee, and Jack C.Lee, “Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties”, Appl. Phys. Lett. 80, p.1249, (2001)
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee , “Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application”, Appl. Phys. Lett. 77, p.3269, (2000)
W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee,"Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application,” Appl. Phys. Lett. 77, p.1704, (2000)
L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee, " Electrical Characteristics of Highly Reliable Ultrathin Hafnium Oxide Gate Dielectric”, IEEE Electron Dev. Lett., 21,p.181, (2000)
B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee, "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing”, Appl. Phys. Lett. 76, p.1926, (2000) (First journal paper on thin HfO2 gate dielectric, cited more than 750 times)
B. H. Lee, Y. Jeon, K. Zawadzki, W. Qi and J. C. Lee, "Effect of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon”, Appl. Phys. Lett. 74, p.3143, (1999)
G. Cha, B. H. Lee, K. W. Lee, G. J. Bae, W. D. Kim, J. H. Lee, I. K. Kim, K. C. Park, S. I. Lee and Y. B. Koh, "Design Considerations for Patterned Wafer Bonding,” Jpn. J. Appl. Phys., 36, p.1912-1916, (1997)
J.M. Leng, J.J. Sidorowich, Y.D. Yoon, J. Opsal, B. H. Lee, G. Cha, J. Moon, and S.I. Lee, "Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry,” J. Appl. Phys. 8, p.3570, (1997)