H.S.Choi, S.H.Hong, R.H.Baek, K.T.Lee, C.Y.Kang, R.Jammy, B.H. Lee, Y.H.Jeong, “Low Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric,” IEEE Electron Dev. Lett., 30(5), p.523, May. 2009.
B.H. Lee, C.Y.Kang, R.Choi, H.D.Lee, G.Bersuker, “Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics,” Appl. Phys. Lett., 94(16), p.162904, Apr. 2009.
W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R.Choi, S.C.Song, B.H. Lee, R.Jammy, Y.H. Jeong and H.-D. Lee, “Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON,” Microelectronics Eng. 86(3), p.268, Mar. 2009.
O.S. Yoo, J.Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs,“ Microelectronics Eng. 86(3), p.259, Mar. 2009.
C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee, “‘Smart” TDDB algorithm for investigating degradation in high-k gate dielectric stacks under constant voltage stress" Microelectronics Eng. 86(3), p.287, Mar. 2009.
I.S.Han, O.S.Yoo, W.H.Choi, H.M.Kwong, M.K.Na, C.Y.kang, G. Bersuker, B.H. Lee, Y.H.Jeong, H.D.Lee, R.Jammy, “Time-Dependent Dielectric Breakdown of La2O3-Doped High-k Dielectric/Metal Gate Stacked NMOSFETs” IEEE Electron Deve. Lett., 30(3), p.298, Mar. 2009.
H.B.Park, B.S.Ju, C.Y.Kang, C.Park, C.S.Park, B.H. Lee, T.W.Kim, B.S.Kim, R.Choi, “Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment,” Appl. Phys. Lett., 94, p.042911, Jan. 2009.
C.D. Young, J.W.Yang, K. Matthews, S. Suthram, M.M.Hussain, G. Bersuker, C. Smith, R. Harris, R.Choi, B.H.Lee, H.H.Tseng, “Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations,” J. Vac. Sci. and Tech. B 27(1), p.468, Jan. 2009.
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, R. Jammy, “New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs, “ IEEE Elect. Dev. Lett., 30(1), p.54-56, Jan. 2009.
H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal , “Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors,” Appl. Phys. Lett., 93. p.192115, Nov. 2008.
O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate” Materials Science and Engineering B, 154, p.102-105, 2008.
J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim, “Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93, 161913, Oct. 2008.
K. Choi, H.C.Wen, G. Bersuker, H. Harris, B.H.Lee, “Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide,” Appl. Phys. Lett. 93, 133056, Oct. 2008.
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, “An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part I,” IEEE Tran. On Electron Dev. 55(9), p.2429, Sep. 2008.
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, “An Accurate Capacitance-Voltage Measurement Method for Highly leaky Devices-Part II,” IEEE Tran. On Electron Dev. 55(9), p.2437, Sep. 2008.
J.M. Lee, H.K. Park, M. Hasan, M. Jo, M. Chang, B. H. Lee, C.S. Park, C.Y. Kang and H. Hwang, “Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient,” Appl. Phys. Lett. 92, p.263505, Jul. 2008.
K.T.Lee, C.Y. Kang, B.S. Ju, R. Choi, K.S.Min, O.S.Yoo, B.H.Lee, R. Jammy, J.C.Lee, H.D. Lee, Y.H. Jeong, “Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs,” IEEE Electron. Dev. Lett., 29, p.565, Jun. 2008.
C.Y.Kang, J.W. Yang, J.Oh, R.Choi, Y.J.Suh, H.C. Floresca, J. Kim, M Kim, B.H. Lee, H.H.. Tseng, R. Jammy, “Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs,” IEEE Electron. Dev. Lett., 29, p.487, May. 2008.
K.T.Lee, C.Y.Kang, O.S.Yoo, R.Choi, B.H.Lee, J.C.Lee, H.D.Lee and Y.H.Yoon, “PBTI-Associated High Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High-k Dielectrics,” IEEE Electron. Dev. Lett., 29, p.389, Apr. 2008.
P.Kirsch, P. Sivasubramani , J. Huang , C. Young , M. Quevedo-Lopez , H.-C. Wen , H. Al-Shareef , K. Choi , C.S. Park , K. Freeman , M. Hussain , G. Bersuker , H. R. Harris , P. Majhi , R. Choi , P.Lysaght , B.H. Lee , H.-H. Tseng , R. Jammy , T. Boescke , D. Lichtenwalner , J. Jur , A. Kingon, “Dipole Model Explaining High-k/Metal Gate Field Effect Transistor Threshold Voltage Tuning,” Appl. Phys. Lett. 92, 092901, Mar. 2008.
A. Neugroschel, G.Bersuker, R.Choi, and B.H.Lee, “Effect of the Interfacial SiO2 Layer in High-k HfO2 Gate Stacks on NBTI,” IEEE Tran. Dev. And Mat. Relia., p.47, Mar. 2008.
O. Sharia, G. Bersuker, B. H. Lee and A. Demkov, “Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface”, Phys. Rev. B, 77, p.1, 2008.
H. Park, R.Choi, B.H. Lee, G. Bersuker, H. Hwang, “Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor ,” Jpn. J. Appl. Phys., Part 1: 47 (1), pp. 136-138, 2008.
P.S. Lysaght, J.C. Woicik, M. A. Sahiner, B.H. Lee and R. Jammy, “Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature", J. of Non-Crystalline Solids, 354, p.399, 2008.
H.K. Park, M.S. Jo, H.J. Choi, M. Hasan, R. Choi, P. Kirsch, C.Y. Kang, B.H. Lee, T.W. Kim, T.H. Lee and H. Hwang, “The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008.
H.C. Wen, P. Majhi, K.Choi, C.S.Park, H.Alshareef, H.Rusty, H.Luan, H.Niimi, H.B.Park, G.Bersuker, P.Lysaght, D.L.Kwong, S.C.Song, B. H. Lee and R. Jammy, “Decoupling the Fermi level pinning effect and intrinsic limitations on p-type effective work function metal electrodes”, Microelectronic Engineering, 85, p.2, Jan. 2008.
Y.Y.Zhang, J.Oh, T.S Bae, Z.Zhong, S.G.Li, S.Y. Jung, K.Y.Park, G.W.Lee, J.S.Wang, P.Majhi, B.H.Lee, H.H. Tseng, Y.H. Jeong, H.D. Lee, “Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs,” Electrochemical and Solid-State Lett. 11(1), H1, 2008.
B.H.Lee, S.C.Song, R.Choi and P.Kirsch, “Metal Electrode/High-k Dielectric Gate Stack Technology for Power Management,” IEEE Trans. on Electron Device, 55, p.8, Jan. 2008. (Invited)
B. H. Lee, C.Y.Kang, S. Krishnan, P.Kirsch, D. Heh, C. Young, J.W. Yang, G. Bersuker, R.Choi, H.D.Lee, “Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate”, Appl. Phys. Lett. 91, p.243514, 2007.
P. Lysaght, J.C. Woicik , M. Sahiner, B. H. Lee, R. Jammy, “Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy,” Appl. Phys. Lett., 91, 122910, 2007.
S. C. Song, M. M.Hussain, C. Burham, C. S. Park, B. H. Lee, and R. Jammy, "Enhanced Process-Induced Strain using Metal Gate/High-k Dielectric Stack on Nano-scale CMOSFET", Solid State Technology, September, 2007.
S. C. Song, M. M.Hussain, C. Burham, C. S. Park, B. H. Lee, and R. Jammy, “Strain-enhanced scaling of HK+MG CMOSFETs,” Solid State Technology, 50(9), pp.46-49, September, 2007.
H. Park, R. Choi, B.H. Lee, and H. Hwang, "Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing", Jpn. J. Appl. Phys., 46 (33), p. 786, 2007.
T. Boscke, S. Govindarajan , P.D. Kirsch , P.Y. Hung , C. Krug , B. H. Lee, J. Heitmann , U. Schroeder , G. Pant , B.E. Gnade , W.H. Krautschneider, “Stabilization of Higher-k Tetragonal HfO2 by SiO2 Admixture Enabling Thermally Stable Metal Insulator Metal Capacitors”, Appl. Phys. Lett., 91, 072902, (2007)
S. Govindarajan, T. S. Böscke, P. Sivasubramani, U. Schröder, S. Ramanathan, P.D. Kirsch,B. E. Gnade, B. H. Lee, H.-H. Tseng, R. Jammy, “Higher Permittivity Rare Earth Doped Hafnium Oxide for sub-45nm Metal-Insulator-Semiconductor Device Applications,” Appl. Phys. Lett., 91, 062906, (2007)
H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, "Determination of Strain in the Silicon Channel Induced by a Metal Electrode", Microscopy and Microanalysis, 13, Supplement S02, pp 838-839, (2007).
C.Y. Kang, R. Choi, M. Hussain, J. Wang, Y.J. Suh, H. Floresca, M. Kim, J. Kim, B. H. Lee, R. Jammy “Effects of Metal Gate-Induced Strain on the Performance of Metal-Oxide-Semiconductor Field Effect Transistors with Titanium Nitride Gate Electrode and Hafnium Oxide Dielectric”, Appl. Phys. Lett., 91, p.033511, (2007)
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Error and correction in capacitance-voltage measurement due to the presence of source and drain", IEEE Elec. Dev. Lett. 28, p.640, (2007)
C.D.Young, D. Heh, A. Neugroschel, R.Choi, B.H.Lee, G.Bersuker, “Electrical characterization and analysis technique for high-k era", Microelectronics Reliability, 47, pp.479-488, (2007)
C.Y. Kang, R. Choi, S.C. Song and B. H. Lee, "Effects of Gate Edge Profile On Off-state Leakage Suppression in Metal Gate/High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors", Appl. Phys. Lett., 90, 183501, (2007)
S. Yoshi, C. Krug, D. heh, H.J. na, H.R. Harris, J.W, Oh, P.D. Kirsch, P. Majhi, B. H. Lee, H.H. Tseng, R. jammy, J.C. Lee and S.K. Banerjee, "Improved Ge Surface passivation with ultrathin SiOx enabling high mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack", IEEE Electr. Dev. Lett. 28, p.308, (2007)
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Accurate series resistance extraction from capacitor using Time-Domain-Reflectometry", IEEE Electr. Dev. Lett. 28, p.279, (2007)
G.Bersuker, J.H.Sim, C.S.Park, C.D.Young, S.V.Nadkarni, R.Choi and B. H. Lee, “Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks,”, IEEE. Trans. on Dev. And Mat. Reliability, 7, p.138, (2007)
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Time Domain Reflectometry for capacitance-voltage measurement with very high leakage current", IEEE Electr. Dev. Lett. 28, p.51, (2007)
M. Chang, M. Jo, H. Park, B. H. Lee, R.Choi, and H. Hwang, "Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric", IEEE Elec. Dev. Lett., 28, p.21, (2007)
O. Sharia, A.Demkov, G.Bersuker, B. H. Lee, "Theoretical study of the insulator interface: band alignment at the SiO2/HfO2 junction", Phys. Rev. B, 74, 1, (2007)
P.Kirsch, M.A.Quevedo-Lopez, S.A.Krishnan, G.Pant, M.J.Kim, R.M.Wallace, B.E.Gande, and B. H. Lee, "Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics", Appl. Phys. Lett., 89, 242909, (2006)
H.N. Alshareef, H.C.Wen, H.F. Luan, K. Choi, H.R. Harris, Y. Senzaki, P. Majhi, B. H. Lee, B.Foran, G. Lian, "Temperature dependence of the work function of ruthenium-based gate electrodes", Thin Solid Films, 515(4), pp.1294-1298 (2006).
H.N. Alshareef, M. Quevedo-Lopez, H.C.Wen, H.R. Harris, P.Kirsch, P. Majhi, B. H. Lee, R. Jammy, D.J.Lichtenwalner, J.S.Jur, A.I.Kingon, "Work function engineering using lanthanide oxide interfacial layers", Appl. Phys. Lett. 89, p.232103, (2006)
H.-C. Wen, H. R. Harris, C.D. Young, H.Luan, H.N. Alshareef, K. Choi, D.-L. Kwong, P. Majhi, G. Bersuker, and B. H. Lee, "On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-k Dielectrics", IEEE Elec. Dev. Lett., 27, p.984, (2006)