W.T. Lee , J.B. Park , S.H. Kim , J. Woo , J/ Shin , G. Choi , S.S. Park ,D.S. Lee , E. Cha , B.H.Lee, and H. Hwang, "High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays," ACS Nano, 6 (9), pp 8166–8172 , Sep. (2012).
S.K.Lee, M.S.Jo, C.W.Sohn, C.Y.Kang, J.C.Lee, Y.H.Jeong, B.H.Lee*, "New insight into PBTI evaluation method for nMOSFETs with stacked high-k/IL gate dielectric," IEEE Elect. Dev. Lett., Sep. 2012
S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, and T. Lee, " Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes", Nanotechnology, 23, p.344013, Aug. 2012.
Y.Kim, Y.G.Lee, M.Kim, C.G. Kang, U.Jung,J.J.Kim, S.C.Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y.Lim, B.H.Lee*, "Capacitance analysis of highly leaky Al2O3 MIM capacitor using time domain reflectometry," IEEE Electron Dev. Lett., 33(9), p. 1303-1305, Jul. 2012.
M.H. Choe, C.-Y. Cho, J.-P. Shim, W.J. Park, S.K. Lim, W.-K. Hong, B.H. Lee, D.S. Lee, S.J. Park, and T. Lee, "Au Nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices", Appl. Phys. Lett. 101, p.031115, Jul. (2012)
S.Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters,B.H. Lee, H. Hwang, L. Pantisano, "A study of the leakage current in TiN/HfO2/TiN capacitors ," Microelectronic Engineering, v.95, p.71-73, Jul. 2012.
J.J. Kim, M. Cho, L.Pantisano,Y.G.Lee, U. Jung, T.Chiarella, M. Togo, N.Horiguchi, G.Groeseneken, B.H.Lee*, "Process dependent N/PBTI characteristics of TiN Gate finFET," IEEE Elect. Dev. Lett.,33(7), p.937, Jul. (2012)
S.C. Lee, G.Jo, S.J. Jang, W.Park, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.H.Lee, "Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes", Jpn. J. Appl. Phys. 51, p.02BK09 , Feb. (2012)
B.H.Lee, Y.G.Lee, U.J.Jung, Y.H.Kim, H.J. Hwang, J.J. Kim, C.G.Kang, "Issues with the Electrical Characterization of Graphene Devices," Carbon Letters, Vol. 13(1), Jan. 2012. (Invited)
K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong, “A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs,” Microelectronics Engineering, 88, p.3411, Dec. 2011
H.M. Kwon, W.H. Choi, I.S. Han, M.K. Na, S.U. Park, J.D. Bok, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs", Microelectronics Engioneering, 88, 3399-3403, Dec. (2011)
H.M. Kwon, W.H. Choi, I.S. Han, S.U. Park, B.S. Park, Y.Y. Zhang, C.Y. Kang, B.H.Lee, R. Jammy, H.D.Lee, "Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics", Microelectronics Engineering, 88, 3415-3418, Dec. 2011
S.S. Park, J.H. Shin, S. Cimino, S.J. Jung, J.M. Lee, S.H. Kim, J.B. Park, W.T. Lee, M.W. Son, B.H. Lee, L. Pantisano and H. Hwang, "Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications", IEEE Elect. Dev. Lett.,32(12), p.1665, Dec. (2011)
S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, “Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19),192110,Nov.,2011.
S.U.Park, H.M,Kwon, I.S. Han, Y.J. Jung, H.Y.Kwak, W.I. Choi, M.L. Ha, J.I. Lee, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, “Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2,” Jpn. J. of Appl. Phys. 50(10), Part 2 (2011)
C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett. 32(11), p.1591, Sep. 2011.
Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee, “Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions”, Organic Electronics 12, p.2144 , Sep. 2011.
H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, “Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC,” Appl. Phys. Lett., 99, 082111 2011., Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.
S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee "Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments," Appl. Phys. Lett. 99, 083306, Aug. 2011.
C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask,” Nanotechnology, 22, p.295201, May. 2011.
K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang,“Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device ,” Nanotechnology, 22(25), p.254023, May. 2011.
Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee*, “Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics,” Appl. Phys. Lett., 98, 183508, 2011. Also, published in Virtual J. of Nanoscale Science and Technology, 23(20), May 23, 2011.
H.M. Kwon, I.S. Han, S.U.Park, J.D.Bok, Y.J. Jung, H.S. Shin, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, “Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer ,” Jpn. J. of Appl. Phys. 50(4), Part 2, 04DD02, Apr. 2011.
Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee, "A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks", Nanotechnology, 22, 045706, Jan. 2011.
B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications, " J. Nanoscience and Nanotechnology 11, 1, p.256-261, Jan. 2011.
W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W.Lee and H.D. Lee, "Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks", IEEE Electron Device Letters, 31, 11, p.1211-1214, Nov. 2010.
H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi, "Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal", J. Vac. Sci. Technol. B 28(6), Nov. 2010.
J.W.Lee, B.H.Lee, H.C.Shin, J.H.Lee, “Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs,” IEEE Elect. Dev. Lett., 31., 10, p.1086-1088, Oct. 2010.
C.D.Young, D.Heh, R.Choi, B.H.Lee, G.Bersuker, "The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics ," J. Semi. Tech. Sci. 10(2), pp.79-99. Jun. 2010.
J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee, “Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs,” IEEE Trans. on Elect. Dev., 57(4), p.913, Apr. 2010.
M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee, “Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness," J. Appl. Phys., 107(3), AN. 034504, Feb. 2010.
H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, and H. Hwang, “Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition,” Jpn. J. Appl. Phys. 48, p.116506 , Nov. 2009.
H.B.Park, C.S.Park, C.Y.Kang, S.C.Song, B.H.Lee, T.Y.Jang, T.W.Kim, J.K.Jeong, R.Choi, “Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric,” Appl. Phys. Lett., 95(19), AN.119113, Nov. 2009.
R.Choi, T.W. Kim, H.Park, B.H. Lee*, “Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric”, Jpn. J. Appl. Phys. 48, p.091404 , Sep. 2009.
C.Y.Kang, R. Choi, B.H. Lee, R.Jammy, “Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs ," J. of Semi. Tech. and Sci. 9(3), pp.166-173. Sep. 2009.
K.T. Lee, C.Y. Kang, M.S. Park, B.H. Lee, H.K.Park, H.Hwang, H.H.Tseng, R.Jammy, Y.H.Jeong, “A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress,” IEEE Electron Dev. Lett., 30(7), p.760, Jul. 2009.
C.D.Young, G.Bersuker, R.Choi, D. Heh, B.H. Lee, Y.Zhao, “Pulsed Id–Vg Methodology and Its Application toElectron-Trapping Characterization andDefect Density Profiling,” IEEE Trans. On Electron Device, 56(6), p.1322, Jun. 2009.
C.Y.Kang, P.Kirsch, B.H. Lee, H.H.Tseng, R.Jammy, “Reliability of La-Doped Hf-Based Dielectrics nMOSFETs,” IEEE Trans. Dev. Mat. Reliability, 9(2), p.171, Jun. 2009.
H.S.Choi, S.H.Hong, R.H.Baek, K.T.Lee, C.Y.Kang, R.Jammy, B.H. Lee, Y.H.Jeong, “Low Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric,” IEEE Electron Dev. Lett., 30(5), p.523, May. 2009.
B.H. Lee, C.Y.Kang, R.Choi, H.D.Lee, G.Bersuker, “Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics,” Appl. Phys. Lett., 94(16), p.162904, Apr. 2009.
W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R.Choi, S.C.Song, B.H. Lee, R.Jammy, Y.H. Jeong and H.-D. Lee, “Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON,” Microelectronics Eng. 86(3), p.268, Mar. 2009.
O.S. Yoo, J.Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs,“ Microelectronics Eng. 86(3), p.259, Mar. 2009.
C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee, “‘Smart” TDDB algorithm for investigating degradation in high-k gate dielectric stacks under constant voltage stress" Microelectronics Eng. 86(3), p.287, Mar. 2009.
I.S.Han, O.S.Yoo, W.H.Choi, H.M.Kwong, M.K.Na, C.Y.kang, G. Bersuker, B.H. Lee, Y.H.Jeong, H.D.Lee, R.Jammy, “Time-Dependent Dielectric Breakdown of La2O3-Doped High-k Dielectric/Metal Gate Stacked NMOSFETs” IEEE Electron Deve. Lett., 30(3), p.298, Mar. 2009.
H.B.Park, B.S.Ju, C.Y.Kang, C.Park, C.S.Park, B.H. Lee, T.W.Kim, B.S.Kim, R.Choi, “Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment,” Appl. Phys. Lett., 94, p.042911, Jan. 2009.
C.D. Young, J.W.Yang, K. Matthews, S. Suthram, M.M.Hussain, G. Bersuker, C. Smith, R. Harris, R.Choi, B.H.Lee, H.H.Tseng, “Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations,” J. Vac. Sci. and Tech. B 27(1), p.468, Jan. 2009.
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, R. Jammy, “New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs, “ IEEE Elect. Dev. Lett., 30(1), p.54-56, Jan. 2009.
H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal , “Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors,” Appl. Phys. Lett., 93. p.192115, Nov. 2008.
O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate” Materials Science and Engineering B, 154, p.102-105, 2008.
J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim, “Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93, 161913, Oct. 2008.