217
Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering", Nano Letters . 16(9), p.5928 (2016)
216
B.J.Co, A.R.Kim, D.J.Kim,  H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim,  B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, “Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor," ACS Applied Materials and Interfaces 8, p.19635-19632 (2016).
215
Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer," on-line published, Physica Status Solidi-RRL (2016).
214
J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing," Nature communications 7, p.11477 (2016).
213
Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering, v.163, p. 55-59 (2016).
212
Y.H.Kim, S.C.Kang,  S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
211
S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene", Vacuum Magazine (2016).
210
H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong, “ Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using  Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor," ACS Applied Materials and Interfaces 8(11), pp. 7248-7256(2016).
209
A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, “ Alloyed 2D metal-semiconductor atomic layer junctions ," Nano Letters  16(3). pp.1890 (2016).
208
J.H.Yang,T.H. Ryu, Y. Lansac, Y.H. Jang, B.H.Lee*, “Shear stress induced enhancement of Piezoelectric properties of PVDF-TrFE thin film," Organic Electronics, 28, p.67-72 (2016).
207
J.S.Jang, M.W.Son, S.K.Chung, K.H.Kim, C.Cho,  B.H.Lee, M.H.Ham, “Low-temperature-grown continuous graphene films from liquid benzene by chemical vapor deposition at ambient pressure," Scientific Report, 5, p.17955 (2015).
206
W.J.Park, Y.H.Kim, U.J. Jung,  J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee*, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials, p.1500279 (2015).
205
B.J. Cho, J.W. Yoon, S.K. Lim, A.R. Kim, S.Y.Choi, D.H. Kim, K.H. Lee, B.H. Lee, H.C. Ko, M.G. Hahm, “Metal decoration effect on gas-sending properties of 2D hybrid structure on flexible substrate," Sensors, 15, 24093 -24913 (2015). (Invited)
204
B.H.Lee*, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, “그래핀 소자기술," The Mag. of the IEIE (2015). (invited)
203
B.J.Cho, J.W.Yoon, S.K.Lim, A.R.Kim, D.H.Kim, S.G.Park, J.D.Kwon, Y.J.Lee. K.H.Lee, B.H.Lee, H.C.Ko, M.G.Hahm, "Chemical sensing of 2D graphene/MoS2 heterostructure device," ACS Applied Materials and Interfaces 7, p.16775 (2015).
202
S. H. Lee, W. Park, B. H. Lee and W. B. Kim, "Patterned Catalyst Arrays of Pd/SnO2 Core-Shell Nanowires for Electrooxidation of Biomass-Derived Alcohols", J. Mater. Chem. A 3, 13492-13499 (2015).
201
U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee*, “Dipole-Induced Gate Leakage Reduction in Scaled MOSFETs with a Highly Doped Polysilicon/Nitrided Oxide Gate Stack,” Microelectronic Engineering, 142, p.1 (2015).
200
C.Cho, S.K.Lee, J.Noh, W.Park  S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee*, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters, 106(21), p.213107 (2015).
199
S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee*, "Graphene transfer in vacuum yielding a high quality interface," Carbon, 93, p.286-294 (2015).
198
S.Park, M.Chu, J.I.Kim, J.Noh, M.Jeon, B.H.Lee, B.Lee, H.Hwang and B.G.Lee, "Electronic system with memristive synapses for pattern recognition," Scientific Reports, 1, 10123 (2015).
197
J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee*, "Sensitivity improvement of graphene/Al2O3/PVDF-TrFE stacked touch device through Al seed assisted dielectric scaling,"  Microelectronics Engineering, 147, p.79-84 (2015).
196
서광하, 황현준, 양진호, 유지애, 이병훈, "Electrostatic force microscopy를 이용한 PVDF-TrFE/Graphene/ZnO:N Barristor 소자연구", The Korean Society of Semiconductor & Display Technology(KSDT), (2015)
195
C.K.Park, H.J.Kim, K.Y.Ko, K.K.Kim, B.H.Lee, J.H.Ahn, "The variation of the enhanced PL efficiency of Y2O3:Eu3+ phosphor films with the height to the ZrO2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography," Microelectronic Engineering, v.136, p.48-50, 2015.
194
M.Chu, B.H.Kim, S.S.Park, H.Hwang, M,Jeon, B.H.Lee, B.G.Lee, “Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron ", IEEE Industrial Electronics, 62(4), P.2410 (2015).
193
Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee*, "Extraction of Effective Mobility from nMOSFETs with Leaky Gate Dielectric using Time Domain Reflectometry,"  IEEE Trans. Elect. Dev., 62(4), P.1092 (2015).
192
Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee*, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale
191
U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)
190
B.J. Cho, M.G. Hahm, M.S. Choi, J.W. Yoon, A.R. Kim, Y.J. Lee, S.G. Park, J.D. Kwon, C.S. Kim, M.K. Song, Y.S. Jeong, K.S. Nam, S.C. Lee, T.J. Yoo, C.G. Kang, B.H. Lee, H.C. Ko, P. Ajayan, D.H. Kim, “ Charge-transfer-based Gas Sensing Using Atomic-layer MoS2”, Scientific Reports, 5, 8052 (2015)
189
B.J.Cho, Cho, A.R. Kim, Y.J. Park, J.W. Yoon, Y.J. Lee, S.C. Lee, T.J. Yoo, C.G. Kang, B.H. Lee, H.C. Ko, D.H. Kim, M.G. Hahm, “Bifuntional Sensing Characteristics of chemical vapor deposition synthesized Atomic-Layered MoS2,” on-line published, ACS Applied Materials and Interface, (2015)
188
K.Yu, J.M.Lee,J.Kim, G.Kim, H.Kang, B.Park, H.Y.Kahng, S. Kwon, S.C.Lee, B.H.Lee, J. Kim, H.I.Park, S.O. Kim, K.Lee, “Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes", Nano Letters, 14(12), p.7100-7106, (2014).
187
S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*, "Nitrogen-treated Memristive Device for Tunable Electronic Synapse", Semiconductor Science and Technology, 29, p.104006 (2014).
186
Y.S.Park, S.M.Kim, H.S.Jeong, C.G.Kang, J.S.Park, H.Song, R.Lee, N.S.Myoung, B.H.Lee, S.Seo, J.T.Kim, G.Y.Jung, “Palladium-decorated Hydrogen Gas Sensors Using Periodically Aligned Graphene Nanoribbons", ACS Applied Materials and Interfaces, 6(15), p.13293 (2014).
185
Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
184
M.H.Kwon, S .K.Kwon, W.I.Choi, C.Y.Kang, B.H.Lee, P.Kirsch, H.D.Lee *, "A Correlation Between Oxygen Vacancies and Reliability Characterisitcs in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor", IEEE Trans. Elect. Dev., 61(8), p.2619 (2014).
183
U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, “Quantitatively estimating defects in graphene devices using discharge current analysis method," Scientific Reports 4, 4886 (2014).
182
U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, “Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method,” Appl. Phys. Lett. 104, 151604 (2014).
181
S.G. Park, S.C. Lee, S. Jandhyala, M.W. Ha, J.S. Lee, L. Colombo, R. Wallace, B.H. Lee, J. Kim, "Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors,” IEEE Elect. Dev. Lett., 35, p. 277- 279, March (2014).
180
C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee*, “Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene,” Appl. Phys. Lett. 104, 161902 (2014).
179
J.W. Kang, Y.S. Choi, B.H. Kim, C.G.Kang, B.H. Lee, C. W. Tu and S.J. Park,"Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode," Appl. Phys. Lett. 104, 051120 (2014).
178
S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate”, Carbon, 68, p.791-797 (2014).
177
M.H. Choe, B.H.Lee, W.J. Park, J.W.Kang, S.H. Jeong , K.J. Cho , W.-K. Hong , B.H.Lee, K.H.Lee. S.J.Park. T.H.Lee, "Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors," Appl. Phys. Lett. 103, 223305 (2013).
176
J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device, 60(11), p.3683 (2013).
175
J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*, "Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs", IEEE Elect. Dev. Lett., 34(9), p.1133 (2013).
174
M. Son, J.G. Son,K.-J. Moon, B.H. Lee, J.-M. Myoung, M. S. Strano, M.-H. Ham*, and C.A. Ross, "Sub-10-nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography," Advanced Materials, 25, pp.4723-4728 (2013).
173
S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang, “Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device," Nanotechnology , 24, 384009 (2013). (Invited)
172
Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, “Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method,” Carbon, 60, p.453-460 (2013).
171
C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3”, Optics Express, 21(20), p.23391 (2013).
170
H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
169
C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).
168
S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang,"Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronics Engineering, 107, p.33-36, Jul. (2013).