S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology 34, p.055010 (2019).
첨부파일 : 2019 SST SKLee.pdf