268
H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee*, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,” In preparation for Advanced Materials (2019).
267
S.M.Kim, S.W.Heo, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive amplitude modulated discharge current analysis of physical defects in a graphene channel," In preparation for Nano Letters (2019).
266
S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "HCI Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics," Submitted to IEEE Electron Device Letters (2019).
265
S.W.Heo, M.G. Jwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor,” Submitted to AIP Advances (2019).
264
B.H.Lee, "CMOS technology on another level,” Nature Electronics, TBD (2019). (News and views)
263
B. Allouche, H.J. Hwang, T.J. Yoo and B.H. Lee*, "Negative electrocaloric effect in antiferroelectric zirconium dioxide thin film,” Submitted to Nanoscale (2019).
262
Y.Yang, J.H.Jeon, J.H.Park, M.S. Lee, B.H.Lee, E.H.Hwang, S.J.Lee, "Plasmonic MXene Electrodes for High-Performance InSe Photodetector,” Submitted to ACS Nano (2019).
261
J.S.Song, K.S.Choi, S.J.Yoon, W.B.Sohn, S.P.Hong, T.H.Lee, H.J.An, S.Y.Cho, S.Y.Kim, D.H.Kim, T.M.Kim, S.Y.Jeong, C.W.Bark, B.H.Lee, S.D.Bu, H.W.Jang, C.H.Jeon, S.H.Lee, "Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect," J. of Physical Chemistry C, 123, 11564-11571 (2019).
260
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” on-line published, Solid State Electronics (2019). 10.1016/j.sse.2019.05.006
259
S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology 34, p.055010 (2019).
258
K.H.Bang, S.S.Chee, K.M. Kim, M.W. Son, H.B. Jang, B.H.Lee, K.W. Baik J.M. Myoung, M.H.Ham, “ Effect of ribbon width on electrical transport properties of graphene nanoribbons,” Nanoconvergence 5(1), 7 (2019).
257
S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee*, “ Threshold voltage modulation of graphene-ZnO barristor using polymer doping of graphene,” on-line published, Advanced Electronic Materials, (2019).
256
L. Lee, J.W. Hwang, J.W. Jung, J.C. Kim, H.I. Lee, S.W.Heo, M.H. Yoon, S.Ju. Choi, N.V.Long, J.S. Park, J.W. Jeong, J. Kim, K.R. Kim, D.H.Kim, S.I. Im, B.H.Lee, K.J.Cho, M.M. Sung, "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors," on-line published, Nature communications (2019).
255
K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, B.H. Lee*, “ High responsivity near infrared photodetector using gate modulated graphene/germanium Schottky photodetector,” in press, Advanced Electronic Materials, (2019).
254
H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
253
S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee *, “ Chemically doped graphene based ternary field effect transistors,” Jpn. J. Appl. Phys.  58(SB), SBBH04 (2019).
252
S. Lai, S.J. Byeon, S.K. Jang, J.H. Lee, B.H. Lee, J.H. Park, Y.H. Kim, S.J. Lee, “HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2," Nanoscale  10, p.18758-18766 (2018).
251
H.J. Hwang, Y.S. Lee, C. Cho, B.H. Lee*, “ Facile process to remove PMMA residue after graphene transfer,” AIP Advances 8(10), p.105326(2018).
250
S.K .Lim, S.C. Kang, T.J. Yoo, S.K. Lee, B.H. Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” Nanomaterials 8(10), p.797(2018).
249
S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).
248
S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).
247
F. Ahmed, S.W. Heo, Y.Z. Zheng, F. Ali, C.H. Ra, H.I. Lee, T. Taniguchi, J. Hone, B.H. Lee, W.J. Yoo, “Dielectric dispersion and high field response of multilayer hexagonal boron nitride,"Advanced Functional Materials 28(40), 1804235(2018).
246
S. Seo, H. Choi, S.Y. Kim, J. Lee, K. Kim, S. Yoon, B.H. Lee, S. Lee , “Growth of centimeter-scale monolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," Advanced Materials Interfaces 5(20), p.1800524(2018).
245
J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
244
K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small  14(28), p. 1801182(2018).
243
W.J.Park, S.F.Shaikh, J.W.Min, S.K.Lee, B.H.Lee, M.M. Hussain, “ Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode,” Nanotechnology, 29, p.325202 (2018).
242
J.I. Yoo, H.S. Jang, J.W.Jang, J.W.Yoon, Y.K. Oh, J.J. Park, S.M. Kang, T.J. Yoo, S.H. Kim, B.H. Lee, S.H. Choa and H.C.Ko, “Reliable peripheral anchor-assisted transfer printing of ultrathin SiO2 for transparent and flexible IGZO-based inverter," Microelectronic Engineering, 197, pp.15-22 (2018).
241
K.H. Bang, S.S. Chee, K.M. Kim, N.W. Son, H.B. Jang, B.H. Lee, K.H. Paik, J.M. Myoung, M.H. Ham, "Effect of ribbon width on electrical transport properties of graphene nanoribbons," Nano Convergence  5, p.7 (2018).
240
N.S. Lim, T.J. Yoo, J.T. Kim, Y.S. Park, K. Yogeenth, H.H. Kim, W.C. Kim, B.H. Lee, G.Y. Jung, “Tunable Graphene Doping by Controlling Nanopores Geometry ona SiO2/Si Substrate,"RSC Advances  8(17), 9031-907 (2018).
239
M.W.Son, H.B.Jang, M.S.Lee, T.H.Yoon, B.H.Lee, W.Lee, M.H.Lee, “Flexible Transparent Nanogenerators Utilizing Shape-modulated ZnO Nanorod Arrays on Graphene Electrodes,"Advanced Materials Technologies  3, 1700355 (2018).
238
D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi, “Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs  by Low Frequency Noise and DC I-V Characterization," IEEE Trans. on Electron Device 65(4), p. 1640 (2018).
237
S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports  8(1), pp.2992 (2018).
236
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
235
H.J.Hwang, S. Heo, W.B.Yoo, B.H.Lee*, “Electrical performance of graphene-ZnO:N barristor on a flexible polyethylene naphthalate (PEN) film," AIP Advances 8, pp.015022 (2018).
234
T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee*, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," ACS Photonics 5(2), 365-370(2018).
233
J.H. Jeon, Y.R. Park, S.H. Choi, J.H. Lee, S.S. Lim, B.H.Lee, Y.J. Song, J.H. Cho, Y.H. Jang, S.J.Lee, "Epitaxial synthesis of molybdenum carbide and formation of a Mo2C/MoS2 hybrid structure via chemical conversion of molybdenum disulfide," ACS Nano, 12, pp.338-346 (2018).
232
Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology 29,055202 (2018).
231
J.Jia, S.Jeon, J.Jeon, J.Xu, Y.J.Song, J.H.Cho, B.H.Lee, J.D.Song, H.J.Kim, E.Hwang, S.J.Lee, “Generalized scheme for high performing photodetectors with a p-type 2D channel layer," Small, 14(9), 1703065 (2018).
230
Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee*, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc. 6(1), p. 164-168 (2017).
229
M.W.Son, Y.Park, S.S.Chee, F.M.Auxilia, K.H.Kim, B.K.Lee, S.G.Lee, S.K.Kang, C.D.Lee, J.S.Lee, K.K.Kim, Y.H.Jang, B.H.Lee, G.Y.Jung, M.H.Ham, “Charge transfer in graphene/polymer interfaces for CO2 detection," Nano Research 11(7), pp.3529-3536(2017).
228
Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
227
J.S.Song, M.G.Lee, H.W.Heong, S.H.Seo, J.A.Yoo, T.L.Kim, J.M.Lee, H.S.No, D.H.Kim, S.Y.Heong, H.J.An, B.H.Lee, C.W.Bark, H.W.Park, H.W.Jang, S.H.Lee, “Template-engineered epitaxial BiVO4 photoanodes for efficient solar water splitting," J. Mat.Chem.A 5(35), pp. 18831-18838 (2017).
226
C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee*, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon 123, pp. 307-310(2017).
225
S.S.Chee, C.H.Oh, M.W.Son, G.C.Son, H.B.Jang, T.J.Yoo, S.M.Lee, W.K.Lee, J.Y.Hwang, H.Y.Choi, B.H.Lee, M.H.Ham, “Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment," Nanoscale (27) , pp.9333(2017).
224
J.Jia, J.Xu, J.H.Park, B.H.Lee, E.H.Hwang, S.J.Lee, “Multifunctional homogeneous lateral black phosphorus junction devices," Chemistry of Materials, 29(7), p.3413-3151 (2017).
223
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).
222
H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale  9, p.2442 (2017).
221
Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
220
Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, “Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer,” on-line published, Scientific Reports, 2016.
219
N. Fujisawa, T.F. Zhang, B.H.Lee, K.H.Kim “A robust method for extracting the mechanical properties of thin films with rough surfaces by nanoindentation," J. of Materials Research  v.31 (23), p.3777 (2016).