256
S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee,” Advantages of a buried-gate structure for graphene field-effect transistor ,” in revision, Nanoscale, (2018).
255
H.J.Hwang, S.Y.Kim, S.C.Kang, B. Allouche, B.H.Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” submitted to Jpn. J. Appl. Phys. (2018).
254
S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee *, “ Chemically doped graphene based ternary field effect transistors,” submitted to Jpn. J. Appl. Phys. (2018).
253
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, “Interface degradation during AC positive-bias temperature instability," submitted to IEEE Trans. on Electron Device  (2018).
252
S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee*, “ Threshold voltage modulation of graphene-ZnO barristor using polymer doping of graphene,” in revision, Nanoscale, (2018).
251
H.J.Hwang, Y.S.Lee, C.Cho, B.H.Lee*, “ Facile process to remove PMMA residue after graphene transfer,” Accepted, AIP Advances (2018).
250
S.K.Lim, S.C. Kang, T.J. Yoo, S.K.Lee, B.H.Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” in press, Nanomaterials (2018).
249
S.W.Heo, S.M.Kim, K.Y.Kim, H.J.Lee, S.Y.Kim, Y.J.Kim, S.M.Kim, H.I.Lee, S.G.Lee, K.R.Kim, S.H.Kang, B.H.Lee*, "Ternary full adder using multi-threshold graphene barristor," in press, IEEE Electron Device Letters (2018).
248
S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik , 530, p.1800224 (2018).
247
F. Ahmed, S.W. Heo, Y.Z. Zheng, F. Ali, C.H. Ra, H.I. Lee, T. Taniguchi, J. Hone, B.H. Lee, W.J. Yoo, “Dielectric dispersion and high field response of multilayer hexagonal boron nitride,"Advanced Functional Materials , 1804235(2018).
246
S.Seo, H. Choi, S.Y.Kim, J. Lee, K. Kim, S.Yoon, B.H.Lee, S.Lee , “Growth of centimeter-scale monolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," In press, ACS Applied Materials and Interfaces (2018).
245
J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
244
K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small  14(28), p. 1801182(2018).
243
W.J.Park, S.F.Shaikh, J.W.Min, S.K.Lee, B.H.Lee, M.M. Hussain, “ Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode,” Nanotechnology, 29, p.325202 (2018).
242
J.I. Yoo, H.S. Jang, J.W>Jang, J.W.Yoon, Y.K. Oh, J.J. Park, S.M. Kang, T.J. Yoo, S.H. Kim, B.H. Lee, S.H. Choa and H.C.Ko, “Reliable peripheral anchor-assisted transfer printing of ultrathin SiO2 for transparent and flexible IGZO-based inverter," Microelectronic Engineering, 197, pp.15-22 (2018).
241
K.H. Bang, S.S. Chee, K.M. Kim, N.W. Son, H.B. Jang, B.H. Lee, K.H. Paik, J.M. Myoung, M.H. Ham, "Effect of ribbon width on electrical transport properties of graphene nanoribbons," Nano Convergence  5, p.7 (2018).
240
N.S. Lim, T.J. Yoo, J.T. Kim, Y.S. Park, K. Yogeenth, H.H. Kim, W.C. Kim, B.H. Lee, G.Y. Jung, “Tunable Graphene Doping by Controlling Nanopores Geometry ona SiO2/Si Substrate,"RSC Advances  8(17), 9031-907 (2018).
239
M.W.Son, H.B.Jang, M.S.Lee, T.H.Yoon, B.H.Lee, W.Lee, M.H.Lee, “Flexible Transparent Nanogenerators Utilizing Shape-modulated ZnO Nanorod Arrays on Graphene Electrodes,"Advanced Materials Technologies  3, 1700355 (2018).
238
D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi, “Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs  by Low Frequency Noise and DC I-V Characterization," IEEE Trans. on Electron Device 65(4), p. 1640 (2018).
237
S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports  8(1), pp.2992 (2018).
236
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
235
H.J.Hwang, S. Heo, W.B.Yoo, B.H.Lee*, “Electrical performance of graphene-ZnO:N barristor on a flexible polyethylene naphthalate (PEN) film," AIP Advances 8, pp.015022 (2018).
234
T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee*, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," ACS Photonics 5(2), 365-370(2018).
233
J.H. Jeon, Y.R. Park, S.H. Choi, J.H. Lee, S.S. Lim, B.H.Lee, Y.J. Song, J.H. Cho, Y.H. Jang, S.J.Lee, "Epitaxial synthesis of molybdenum carbide and formation of a Mo2C/MoS2 hybrid structure via chemical conversion of molybdenum disulfide," ACS Nano, 12, pp.338-346 (2018).
232
Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology 29,055202 (2018).
231
J.Jia, S.Jeon, J.Jeon, J.Xu, Y.J.Song, J.H.Cho, B.H.Lee, J.D.Song, H.J.Kim, E.Hwang, S.J.Lee, “Generalized scheme for high performing photodetectors with a p-type 2D channel layer," Small, 14(9), 1703065 (2018).
230
Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee*, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc. 6(1), p. 164-168 (2017).
229
M.W.Son, Y.Park, S.S.Chee, F.M.Auxilia, K.H.Kim, B.K.Lee, S.G.Lee, S.K.Kang, C.D.Lee, J.S.Lee, K.K.Kim, Y.H.Jang, B.H.Lee, G.Y.Jung, M.H.Ham, “Charge transfer in graphene/polymer interfaces for CO2 detection," Nano Research 11(7), pp.3529-3536(2017).
228
Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
227
J.S.Song, M.G.Lee, H.W.Heong, S.H.Seo, J.A.Yoo, T.L.Kim, J.M.Lee, H.S.No, D.H.Kim, S.Y.Heong, H.J.An, B.H.Lee, C.W.Bark, H.W.Park, H.W.Jang, S.H.Lee, “Template-engineered epitaxial BiVO4 photoanodes for efficient solar water splitting," J. Mat.Chem.A 5(35), pp. 18831-18838 (2017).
226
C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee*, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon 123, pp. 307-310(2017).
225
S.S.Chee, C.H.Oh, M.W.Son, G.C.Son, H.B.Jang, T.J.Yoo, S.M.Lee, W.K.Lee, J.Y.Hwang, H.Y.Choi, B.H.Lee, M.H.Ham, “Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment," Nanoscale (27) , pp.9333(2017).
224
J.Jia, J.Xu, J.H.Park, B.H.Lee, E.H.Hwang, S.J.Lee, “Multifunctional homogeneous lateral black phosphorus junction devices," Chemistry of Materials, 29(7), p.3413-3151 (2017).
223
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).
222
H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale  9, p.2442 (2017).
221
Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
220
Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, “Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer,” on-line published, Scientific Reports, 2016.
219
N. Fujisawa, T.F. Zhang, B.H.Lee, K.H.Kim “A robust method for extracting the mechanical properties of thin films with rough surfaces by nanoindentation," J. of Materials Research  v.31 (23), p.3777 (2016).
218
A.K. Khan, B.,H.Lee*, " Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device," AIP Advances  6, p.096022 (2016).
217
Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering", Nano Letters . 16(9), p.5928 (2016)
216
B.J.Co, A.R.Kim, D.J.Kim,  H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim,  B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, “Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor," ACS Applied Materials and Interfaces 8, p.19635-19632 (2016).
215
Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer," on-line published, Physica Status Solidi-RRL (2016).
214
J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing," Nature communications 7, p.11477 (2016).
213
Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering, v.163, p. 55-59 (2016).
212
Y.H.Kim, S.C.Kang,  S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
211
S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene", Vacuum Magazine (2016).
210
H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong, “ Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using  Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor," ACS Applied Materials and Interfaces 8(11), pp. 7248-7256(2016).
209
A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, “ Alloyed 2D metal-semiconductor atomic layer junctions ," Nano Letters  16(3). pp.1890 (2016).
208
J.H.Yang,T.H. Ryu, Y. Lansac, Y.H. Jang, B.H.Lee*, “Shear stress induced enhancement of Piezoelectric properties of PVDF-TrFE thin film," Organic Electronics, 28, p.67-72 (2016).
207
J.S.Jang, M.W.Son, S.K.Chung, K.H.Kim, C.Cho,  B.H.Lee, M.H.Ham, “Low-temperature-grown continuous graphene films from liquid benzene by chemical vapor deposition at ambient pressure," Scientific Report, 5, p.17955 (2015).