273 J. Jeon, H. Choi, S.Choi, J.H.Park, B.H.Lee, E. Hwang, S.J.Lee, “Transition-Metal-Carbide (Mo2C) Multiperiod Gratings for Realization of High-Sensitivity and Broad-Spectrum Photodetection," Advanced Functional Materials , in press, 1905384,(2019).
272 S.M.Kim, S.W.Heo, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive amplitude modulated discharge current analysis of physical defects in a graphene channel," In preparation for Nano Letters (2019).
271 M.Son, H.Kim, J.Jang, S.Y.Kim, H.C.Ki, B.H.Lee, I.Kim, M.H.Ham, "Low-power complementary logic circuit using polymer electrolyte-gated graphene switching devices", In press, ACS Applied Materials & Interfaces (2019).
270 H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee*, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,” Submitted to Advanced Electronic Materials (2019).
269 B. Allouche, H.J. Hwang, T.J. Yoo and B.H. Lee*, "Negative electrocaloric effect in antiferroelectric zirconium dioxide thin film,” in revision, Nanoscale (2019).
268 H.J.An, H. Hong, Y.R.Jo, J.M.Lee, H.J.Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H.Lee, B.J.Kim, S.G.Jung, T.S.Park, S.M.Kim, C.W.Bark, S.W.Kim, T.Y. Koo, K.T.Ko,, B.J.Kim, S.H.Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films,” In press, NPG Asian Materials(2019).
267

Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H.Ko, J.W.Lee, K.J. Kim, B.H.Lee, Y.M. Song, "Mechanically Robust Antireflective Moth-eye Structures with a tailored coating of dielectric materials,” Optical Materials Express, 9(11), 4178-4186, (2019).

266 J.Y.Jia, J.J. Jeon, J.H.Park, B.H.Lee, E.H. Hwang, S.J.Lee, "Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector ,” Small 15, 1805352 (2019).
265 S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics,"IEEE Electron Device Letters 40(11), 171 6(2019).
264 S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifie,” AIP Advances 9(9), 095009, (2019).
263 N.S.Lim, Y.S.Park, J.K. Kim, T.J.Yoo, H.H. Kim, Y. Kumaresan, W.C.Kim, S.J. Cho, S.C.Kwon, B.H.Lee, T.H.Lee, G.Y.Jung, "Enhanced Photo-response of MoS₂ Photodetectors by a Laterally Aligned SiO₂ Nanoribbon Array Substrate,” ChemNanoMat, 5(10), 1272-1279, (2019).
262 B.H.Lee, "CMOS technology on another level,” Nature Electronics 2, p.272-273 (2019). (News and views)
261 Y.Yang, J.H.Jeon, J.H.Park, M.S. Jeong, B.H.Lee, E.H.Hwang, S.J.Lee, "Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors,” ACS Nano (2019).
260 J.S.Song, K.S.Choi, S.J.Yoon, W.B.Sohn, S.P.Hong, T.H.Lee, H.J.An, S.Y.Cho, S.Y.Kim, D.H.Kim, T.M.Kim, S.Y.Jeong, C.W.Bark, B.H.Lee, S.D.Bu, H.W.Jang, C.H.Jeon, S.H.Lee, "Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect," J. of Physical Chemistry C, 123(18), pp.11564-11571 (2019).
259 S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,”  Solid State Electronics 158, pp.46-50(2019).
258 S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology 34, p.055010 (2019).
257 S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee*, “ Threshold Voltage Modulation of Graphene-ZnO Barristor Using a Polymer Doping Process,” Advanced Electronic Materials, 5(7), 1800805, (2019).
256 L. Lee, J.W. Hwang, J.W. Jung, J.C. Kim, H.I. Lee, S.W.Heo, M.H. Yoon, S.Ju. Choi, N.V.Long, J.S. Park, J.W. Jeong, J. Kim, K.R. Kim, D.H.Kim, S.I. Im, B.H.Lee, K.J.Cho, M.M. Sung, "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors," Nature communications 10(1), p.1998 (2019).
255 K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee*, “ High-Responsivity Near-Infrared Photodetector Using Gate-modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials, 5(6), 1800957 (2019).
254 S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee *, “ Chemically doped graphene based ternary field effect transistors,” Jpn. J. Appl. Phys.  58(SB), SBBH04 (2019).
253 H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
252 S. Lai, S.J. Byeon, S.K. Jang, J.H. Lee, B.H. Lee, J.H. Park, Y.H. Kim, S.J. Lee, “HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2," Nanoscale  10, p.18758-18766 (2018).
251 H.J. Hwang, Y.S. Lee, C. Cho, B.H. Lee*, “ Facile process to remove PMMA residue after graphene transfer,” AIP Advances 8(10), p.105326(2018).
250 S.K .Lim, S.C. Kang, T.J. Yoo, S.K. Lee, B.H. Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” Nanomaterials 8(10), p.797(2018).
249 S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).
248 S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).
247 F. Ahmed, S.W. Heo, Y.Z. Zheng, F. Ali, C.H. Ra, H.I. Lee, T. Taniguchi, J. Hone, B.H. Lee, W.J. Yoo, “Dielectric dispersion and high field response of multilayer hexagonal boron nitride,"Advanced Functional Materials 28(40), 1804235(2018).
246 J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
245 S. Seo, H. Choi, S.Y. Kim, J. Lee, K. Kim, S. Yoon, B.H. Lee, S. Lee , “Growth of centimeter-scale monolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," Advanced Materials Interfaces 5(20), p.1800524(2018).
244 K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small  14(28), p. 1801182(2018).
243 W.J.Park, S.F.Shaikh, J.W.Min, S.K.Lee, B.H.Lee, M.M. Hussain, “ Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode,” Nanotechnology, 29, p.325202 (2018).
242 J.I. Yoo, H.S. Jang, J.W.Jang, J.W.Yoon, Y.K. Oh, J.J. Park, S.M. Kang, T.J. Yoo, S.H. Kim, B.H. Lee, S.H. Choa and H.C.Ko, “Reliable peripheral anchor-assisted transfer printing of ultrathin SiO2 for transparent and flexible IGZO-based inverter," Microelectronic Engineering, 197, pp.15-22 (2018).
241 K.H. Bang, S.S. Chee, K.M. Kim, N.W. Son, H.B. Jang, B.H. Lee, K.H. Paik, J.M. Myoung, M.H. Ham, "Effect of ribbon width on electrical transport properties of graphene nanoribbons," Nano Convergence  5, p.7 (2018).
240 N.S. Lim, T.J. Yoo, J.T. Kim, Y.S. Park, K. Yogeenth, H.H. Kim, W.C. Kim, B.H. Lee, G.Y. Jung, “Tunable Graphene Doping by Controlling Nanopores Geometry ona SiO2/Si Substrate,"RSC Advances  8(17), 9031-907 (2018).
239 M.W.Son, H.B.Jang, M.S.Lee, T.H.Yoon, B.H.Lee, W.Lee, M.H.Lee, “Flexible Transparent Nanogenerators Utilizing Shape-modulated ZnO Nanorod Arrays on Graphene Electrodes,"Advanced Materials Technologies  3, 1700355 (2018).
238 D.H.Kim, S.K.Lim, B.Y.Bae, C.K.Kim, S.W.Lee, M.S.Seo, S.Y.Kim, K.M.Hwang, G.B.Lee, B.H. Lee. Y.G.Choi, “Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs  by Low Frequency Noise and DC I-V Characterization," IEEE Trans. on Electron Device 65(4), p. 1640 (2018).
237 S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports  8(1), pp.2992 (2018).
236 S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
235 H.J.Hwang, S. Heo, W.B.Yoo, B.H.Lee*, “Electrical performance of graphene-ZnO:N barristor on a flexible polyethylene naphthalate (PEN) film," AIP Advances 8, pp.015022 (2018).
234 T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee*, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," ACS Photonics 5(2), 365-370(2018).
233 J.H. Jeon, Y.R. Park, S.H. Choi, J.H. Lee, S.S. Lim, B.H.Lee, Y.J. Song, J.H. Cho, Y.H. Jang, S.J.Lee, "Epitaxial synthesis of molybdenum carbide and formation of a Mo2C/MoS2 hybrid structure via chemical conversion of molybdenum disulfide," ACS Nano, 12, pp.338-346 (2018).
232 Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology 29,055202 (2018).
231 J.Jia, S.Jeon, J.Jeon, J.Xu, Y.J.Song, J.H.Cho, B.H.Lee, J.D.Song, H.J.Kim, E.Hwang, S.J.Lee, “Generalized scheme for high performing photodetectors with a p-type 2D channel layer," Small, 14(9), 1703065 (2018).
230 Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee*, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc. 6(1), p. 164-168 (2017).
229 M.W.Son, Y.Park, S.S.Chee, F.M.Auxilia, K.H.Kim, B.K.Lee, S.G.Lee, S.K.Kang, C.D.Lee, J.S.Lee, K.K.Kim, Y.H.Jang, B.H.Lee, G.Y.Jung, M.H.Ham, “Charge transfer in graphene/polymer interfaces for CO2 detection," Nano Research 11(7), pp.3529-3536(2017).
228 Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
227 J.S.Song, M.G.Lee, H.W.Heong, S.H.Seo, J.A.Yoo, T.L.Kim, J.M.Lee, H.S.No, D.H.Kim, S.Y.Heong, H.J.An, B.H.Lee, C.W.Bark, H.W.Park, H.W.Jang, S.H.Lee, “Template-engineered epitaxial BiVO4 photoanodes for efficient solar water splitting," J. Mat.Chem.A 5(35), pp. 18831-18838 (2017).
226 C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee*, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon 123, pp. 307-310(2017).
225 S.S.Chee, C.H.Oh, M.W.Son, G.C.Son, H.B.Jang, T.J.Yoo, S.M.Lee, W.K.Lee, J.Y.Hwang, H.Y.Choi, B.H.Lee, M.H.Ham, “Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment," Nanoscale (27) , pp.9333(2017).
224 J.Jia, J.Xu, J.H.Park, B.H.Lee, E.H.Hwang, S.J.Lee, “Multifunctional homogeneous lateral black phosphorus junction devices," Chemistry of Materials, 29(7), p.3413-3151 (2017).