구분 번호 제목
국제 94
J.H. Sim, S.C. Song, R. Choi, C.D. Young, G. Bersuker, S.H. Bae, D.L. Kwong and B. H. Lee, “Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode”, Proc. of DRC, (2005).
국제 93
K. Choi, P.Lysaght, Alshareef, H. C. Wen, R. Harris, H. Luan, K.Matthews, P. Majhi, and B. H. Lee, “Growth Mechanism of ALD-TiN and the Thickness Dependence of Work Function”, Proc. of VLSI-TSA, p.103, (2005).
국제 92
P. Majhi, H.C. Wen, K. Choi, H. Alsharee, C. Huffman, and B. H. Lee, “A Systematic Study of the Influence of Nitrogen in Tuning the Effective Work Function of Nitrided Metal Gates ”, Proc. of VLSI-TSA, p.105, (2005).
국제 91
H.C. Wen, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luand, and B. H. Lee, “Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS”, Proc. of VLSI-TSA, p.107, (2005).
국제 90
C.D. Young, R. Choi, J.H. Sim, B. H. Lee, P. Zeitzoff, bY. Zhao, K. Matthews, G.A. Brown, and G. Bersuker, “Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization”, Proc. of IRPS, p.75, (2005).
국제 89
R. Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, “Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices”, Proc. of IRPS, p.80, (2005).
국제 88
R. Choi, R. Harris, B. H. Lee, C.D. Young, J.H. Sim, K. Matthews, M. Pendley and G. Bersuker, “Threshold voltage instability of HfSiO dielectric MOSFET under AC pulsed stress”, Proc. of IRPS, p.634, (2005).
국제 87
R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, “Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack”, Proc. of IRPS, p.636, (2005).
국제 86
J. H. Sim, B. H. Lee, S. C. Song, C. D. Young a, R. Choi, H. Rusty Harris and G. Bersuker, “Hot carrier and cold carrier studies during stress in Hf-silciate NMOS transistors with Poly and TiN gate stack”, Proc. of IRPS, p.638, (2005).
국제 85
M. S. Akbar, N. Moumen, J. Barnett, B. H. Lee and J.C. Lee, “Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology”, Proc. of IRPS, p.640, (2005).
국제 84
S.A. Krishnan, J.J. Peterson, C. Young, G. Brown, R. Choi, R. Harris, J. Sim, B. H. Lee, P. Zeitzoff, P. Kirsch, J.Gutt, H.J. Li, K. Matthews, J.C. Lee, and G. Bersuker, “Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors”, Proc. of IRPS, p.642, (2005).
국제 83
H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young and H. Hwang, “Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric”, Proc. of IRPS, p.646, (2005).
국제 82
S.C.Song, S.H.Bae, Z.Zhang, J.H.Sim, B.Sassman, G.Bersuker, P.Zeitzoff, and B.H.Lee, “Impact of Plasma Induced Damage on PMOSFETs with TiN/Hf-silicate Stack”, Proc. of IRPS, p.398, (2005).
국제 81
J. H. Sim, S.C. Song, P.D. Kirsch,C. D. Young, R. Choi, G. Bersuker, D. L. Kwong and B. H. Lee, “ALD HfO2 thickness dependence on charge trapping characteristics in mobility enhancement”, Proc. of INFOS, p.218, (2005).
국제 80
Y. Senzaki, K.Choi, P. D. Kirsch, P. Majhi, and B. H. Lee, “Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices”, Characterization and Metrology for ULSI technology, (2005), Invited.
국제 79
B.H.Lee, C.D.Young, R.Choi, J.H.Sim, G.Bersuker, C.Y.Kang, R.Harris, G.A.Brown, K.Matthews, S.C.Song, N.Moumen, J.Barnett, P.Lysaght, K.S.Choi, H.C.Wen, C.Huffman, H.Alshareef, P.Majhi, S.Gopalan, J.Peterson, P.Kirsh, H.-J Li, J.Gutt, M.Gardner, H.R.Huff, P.Zeitzoff, R.W.Murto, L.Larson, and C.Ramiller, “Intrinsic characteristics of high-k devices and implications of transient charging effects”, Tech.Dig. of IEDM, p.859, (2004), Invited.
국제 78
C.Y. Kang, R. Choi, J. H. Sim, C. Young, B. H. Lee, G. Bersuker and Jack C. Lee, “Charge Trapping Effects in HfSiON dielectrics on the Ring Oscillator Circuit and the Single Stage Inverter Operation”, Tech Dig. of IEDM, p.485, (2004).
국제 77
C.D. Young, R. Choi, B. H. Lee, G. Bersuker, P. Zeitzoff, J.H. Sim, H.R. Harris, and G.A. Brown, “Characterizing Hf-Based Bulk Film Properties Using Ultra-short Pulse I-V Measurements”, Proc. of SISC, (2004).
국제 76
R. Choi, Rusty Harris, B. H. Lee, K. Matthews, Mike Pendley, Chadwin Young, J. H. Sim, G. Bersuker, “The frequency dependence of AC stress induced charging and it’s relaxation in TiN/Hf-Silicate NMOSFETs”, Proc. of SISC, (2004).
국제 75
G. A. Brown, G. Smith, J. Saulters, K. Matthews, H.-C. Wen, H. AlShareef, P. Majhi and B. H. Lee, “An Improved Methodology for Gate Electrode Work Function Extraction in SiO2 and High-k Gate Stack Systems Using Terraced Oxide Structures”, Proc. of SISC, (2004).
국제 74
C. Y. Kang, R. Choi, H. Rusty, B. H. Lee, G. Bersuker, and Jack C. Lee, “A Study of Charge Trapping Dynamics in HfSiON Dielectrics Using the Single Stage Inverter Circuit”, Proc. of SISC, (2004).
국제 73
Y. Zhao, C.D. Young, M. Pendley, K. Matthews, B. H. Lee and G.A. Brown, “Effective Minimization of Charge-trapping in High-k gate Dielectrics with an Ultra-short Pulse Technique”, 7th International Conference on Solid-State and Integrated Circuits Technology, p.470, (2004).
국제 72
R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, “Effects of drain to gate stress on NMOSFET with polysilicon/Hf-silicate gate stack”, Proc. of Integrated Rel. Workshop, p.128, (2004).
국제 71
H. Rusty Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, “Recovery of NBTI degradation in HfSiON /Metal Gate Transistors”, Proc. of Integrated Rel. Workshop, p. 132, (2004).
국제 70
J. H. Sim, B. H. Lee, R. Choi, S. C. Songa, C. D. Younga P. Zeitzoffa, D.L. Kwong and G. Bersuker, “Hot carrier stress study in Hf-silicate NMOS transistors”, Proc. of Integrated Rel. Workshop, p.136, (2004).
국제 69
G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, “Mobility Evaluation in High-K Devices”, Proc. of Integrated Rel. Workshop, p.141, (2004).
국제 68
G.Bersuker, J.H.Sim, C.Young, R.Choi, P.Zeizoff, G,Brown, B. H. Lee and R.A.Murto, “Effect of pre-existing defects on reliability assessment of high-k gate dielectrics”, ESREF, (2004).
국제 67
N. Moumen, J.J. Peterson, J. Barnett, B. H. Lee, J.H. Sim, R.W. Murto, G. Bersuker and H.R. Huff , “Effects of NH3 pre-anneal deposition on ALD high-k gate stacks”, Electrochemical Society Symposium, Honolulu, (2004).
국제 66
P. D. Kirsch, J. Gutt, J. J. Peterson, S. Gopalan, S. Krishnan, H.-J. Li, P.Y. Hung, M. C. Chudzik, M. Gardner, B. H. Lee and H. R. Huff, “Electrical and Materials Characterization of Atomic Layer Deposited HfO2 Using Hf[N(CH3)C2H5]4 and O3 on HF Last Surface”, 11th Workshop on oxide electronics, (2004).
국제 65
K. Choi, H.-C. Wen, P. Majhi, and B. H. Lee, “Effect of Underlying Dielectric Film on the ALD-TiN film Properties”, 11th Workshop on oxide electronics, (2004).
국제 64
J. Barnett, Chadwin D. Young, N. Moumen, G. Bersuker, J.J. Peterson, G.A. Brown, B. H. Lee and H. Huff, “Enhanced Surface Preparation Techniques for the Si/High-k Interface”, UCPSS, (2004).
국제 63
J. Barnett, C. D. Young, N. Moumen, G. Bersuker, J. J. Peterson, G. A. Brown, B. H. Lee, and H. R. Huff, “Enhanced Surface Preparation Techniques for the Si/High-k Interface”, Ultra Clean Processing of Silicon Surfaces Conference VII , Solid State Phenomena, Vols 103-104, p.11-14, Fall, (2004).
국제 62
B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and P. Zeitzoff, “Transient charging in high-k gate dielectrics and it’s implications”, Ext. Abs. of SSDM, p.518, (2004).
국제 61
R. Choi, B. H. Lee, J.H. Sim, G. Bersuker and G.A. Brown, “Temperature effect of constant bias stress on MOSFET with HfSiON gate dielectric”, Ext. Abs. of SSDM, p.24, (2004).
국제 60
J.H. Sim, R. Choi, B. H. Lee, Chadwin Young and G. Bersuker. “Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode”, Ext. Abs. of SSDM, p.214, (2004).
국제 59
C. D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G. Bersuker, and G.A. Brown, “Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-k Devices”, Ext. Abs. of SSDM,p.216, (2004).
국제 58
H.K. Park, B. H. Lee, M. Gardner, and H. Hwang, “Effects of high pressure hydrogen and deuterium anneal on TiN gate nMOSFET with Hf-base gate dielectrics”, Ext. Abs. of SSDM, p.748, (2004).
국제 57
R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, “Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics”, International symposium on the physical and failure analysis of integrated circuits (IPFA), p.21, (2004).
국제 56
J.H.Sim, B. H. Lee, R.Choi, K.Matthew, P.Zeitzoff, and G.Bersuker, “Hot carrier reliability of HfSiON PMOSFETs with Metal gate”, International symposium on the physical and failure analysis of integrated circuits (IPFA), p.157, (2004).
국제 55
V. Narayanan, C.Cabral, F.R. McFeely, A.C. Callegari, S.Zafar, P.C. Jamison, A.L.Steegen, M.Gribelyuk, E. Cartier, V. Ku, P.Nguyen, A.Vayshenker, Y. Li, B. H. Lee, S.Guha, E.Gousev, M. Copel, D. Neumayer, R. Jammy, M. Ieong, W. Haensch, G.Shahidi, “Dual Metal Gate CMOS Using CVD Metal Gate Electrode”, Proceedings of Electronic Material Conference, (2004), Invited.
국제 54
D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi, “Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode”, Electronic Materials Conference, (2004).
국제 53
R.Choi, B. H. Lee, J.H.Sim, G.Bersuker, L.Larson, J.C.Lee, “Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate”, Proc. of Device Research Conference, p.17, (2004).
국제 52
J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong , P. Tsui, and G. Bersuker, “Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate”, Proc. of Device Research Conference, (2004).
국제 51
S. Zafar, B. H. Lee, J. Stathis and T. Ning, “A Model for Negative Bias Temperature Instability (NBTI) in Oxide and High-k pFETs” Proc. of Symposium on VLSI Technology, p.208, (2004).
국제 50
D.-G. Park, Z.J. Luo, N. Edleman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B. H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchel, V. Ku, H. Kim, E. Duch, P. Kozlowski, C.D’Emic,V. Narayanan, A. Steegen, R. Wise, R. Jammy, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, Symposium on VLSI Technology, p.136, (2004).
국제 49
J. J. Peterson, G. A. Brown, K. Matthews, J. Gutt, S. Gopalan, H.J. Li, J. Barnett, N. Moumen, P. Majhi, N. Chaudhary, C. D. Young, B. Sassman, B. H. Lee, G. Bersuker, P. M. Zeitzoff, P. Lysaght, M. Gardner and H. R. Huff, “Towards 0.5 nm EOT Scaling of HfO2 / Metal Electrode Gate Stacks”, ECS Fall meeting, Honolulu, 2004. (Invited)
국제 48
B.H.Lee, J.H.Sim, R.Choi, K.Matthew, G.Bersuker, N.Moumen, J.Peterson and L.Larson, “Localized transient charging and it’s implication on the hot carrier reliability of HfSiON MOSFETs”, International Reliability Physics Symposium, p.691, (2004), Late news paper.
국제 47

G. Bersuker, J. Gutt, N. Chaudhary, N. Moumen, B. H. Lee, J. Barnett, S. Gopalan, J. Peterson, H.-J. Li, P. M. Zeitzoff, G.A. Brown, Y . Kim, C. D. Young, J. H. Sim, P. Lysaght, M. Gardner, R. W. Murto, and H. R. Huff, “Integration Issues of High-K Gate Stack: Process-Induced Charging”, International Reliability Physics Symposium, p.479, (2004), Invited.

국제 46
J. Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B. H. Lee, G. Bersuker, P. M. Zeitzoff, G.A. Brown, P. Lysaght, C. Young, R.W. Murto, and H. R. Huff, “Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface”, MRS spring meeting, San Francisco, (2004).
국제 45
G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff, “Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance”, MRS spring meeting, San Francisco, (2004).