구분 번호 제목
국제 126
C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress”, Proc. of Int. Integrated Rel. Workshop, p.78, (2005).
국제 125
S.A. Krishnan, M.A. Quevedo-Lopez1, R. Choi, P. Kirsch, C. Young, R. Harris, J. Peterson, H.J. Li, B. H. Lee and J.C. Lee, “ultra-thin ALD-HfSiON/TiN Gate Stacks”, Proc. of Int. Integrated Rel. Workshop, p.89, (2005).
국제 124
Z. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, and B. H. Lee, “An Integrable Dual Metal Gate/High-k CMOS Solution for FD-SOI and MuGFET Technologies”, Proc. of IEEE SOI conf., (2005).
국제 123
C. Y. Kang, R. Choi, S. C. Song, B. S. Ju, M. M. Hussain, B. H. Lee, J-W. Yang, D. Pham, H-H Tseng, “Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics”, IEEE SOI Conference, (2006).
국제 122
B. H. Lee,, P. Kirsch, P. Majhi, S.C. Song, R. Choi and G. Bersuker , “Prospect of high-k/metal gate stack technology for future CMOS devices,” 5th int. Symp. on Physics and Chemistry of SiO2 and Si-SiO2 interface, ECS Meeting, (2005), Invited.
국제 121
B. H. Lee, R. Choi, S.C. Song, J.Sim, C.Young, G. Bersuker, and H.K. Park and H.Hwang, “Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics”, Ext. Abs. of Symp. on SSDM, (2005), Invited.
국제 120
S.A. Krishnan, M. Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young and J.C. Lee, “NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 119
R. Choi, B. H. Lee, H. K. Park, C.D. Young, J.H. Sim, S.C. Song and G. Bersuker, “A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 118
S.C.Song, S.H.Bae, J.H.Sim, G.Bersuker, Z.Zhang, P.Kirsch, P.Majhi, N.Moumen, P. Zeitzoff, and B. H. Lee, “Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 117
H.K. Park, R. Choi, B. H. Lee, C.D. Young, M. Chang, J.C. Lee and H. Hwang, “Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 116
P.D. Kirsch, S.C.Song, J.H.Sim, S. Krishnan, J.Gutt, J. Peterson, H.-J Li, M. Quevedo-Lopez, C.D.Young, R.Choi, J.Barnett, N.Moumen, , K.S.Choi, , C.Huffman,P.Majhi, M.Gardner, G.Brown, G.Bersuker, B. H. Lee, “Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2”, Proc. of ESSDERC, (2005).
국제 115
K. Choi, H. Alshareef, P. Lysaght, H.-C. Wen, R. Harris, H. Luan, P. Majhi, and B. H. Lee, “Work function tuning by thickness variation of metal film and dielectric surface treatment”, Proc. of ESSDERC, (2005).
국제 114
H.R. Harris, H.C. Wen, K. Choi, H. Alshareef, H. Luan, Y. Senzaki, C.D. Young, S.C. Song, Z. Zhang, G. Bersuker, P. Majhi and B. H. Lee, “Demonstration of High Performance Transistors with PVD Metal Gate”, Proc. of ESSDERC, (2005).
국제 113
Y. Senzaki, J. Gutt, G. Brown, P. Kirsch, H. Alshareef, K. Choi, H. Wen, P. Majhi and B. H. Lee, “ALD of Advanced High-k dielectric and Metal Gate Stacks for MOS Devices”, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, p.69, (2005), Invited.
국제 112
P. S. Lysaght, H.-C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi and B. H. Lee, “Physical Characterization of Novel Metal Electrodes for Hf-based Transistors”, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, p.136, (2005).
국제 111
S.H Bae, S.C. Song, B. H. Lee, “Impact of thickness of metal nitride (TiN) in Poly Si/TiN gate stack on electrical performance and reliability ”, Proceedings of EMC, (2005).
국제 110
Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, and B. H. Lee, “Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric”, Proc. of VLSI, p.50, (2005).
국제 109
H.C.Wen, H.N. Alshareef, H.Luan, K. Choi, P. Lysaght, H.R., Harris, C. Huffman, G.A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B. H. Lee, “Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications”, Proc. of VLSI, p.46, (2005).
국제 108
P. D. Kirsch, J.J. Peterson, H.-J. Li, J. Gutt, S. Krishnan, M. Quevedo-Lopez, B. H. Lee, N. Moumen, J. Barnett, P. Majhi, S.C. Song and C. Ramiller, “High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors”, ISTC, (2005), Invited.
국제 107
B. H. Lee,, G. Bersuker, N. Moumen, P. Majhi, P. Kirsch, S.C. Song and C. Ramiller, “Electrical Characterization Methodologies for Advanced Gate Stacks with Metal gate and High-k dielectrics”, International Semiconductor Technology Conference, (2005), Invited.
국제 106
B. H. Lee,, R.Choi, C.Young, J.Sim and G.Bersuker,“Transient charging effects and its implication to the reliability of high-k dielectrics”, NATO Workshop on defect in high-k dielectrics, St. Petersburg, (2005), Invited.
국제 105
G. Bersuker, B. H. Lee, and H. Huff, “Mechanism of charge trapping reduction in scaled high-k gate stacks,” NATO Worksho”, NATO Workshop on defect in high-k dielectrics, St. Petersburg, (2005), Invited.
국제 104
P.Majhi, and B. H. Lee, “A preliminary understanding of processing-nanostructure-property inter-relationships in High-k/Metal gate stacks”, NATO Workshop on defect in high-k dielectrics, St. Petersburg, (2005), Invited.
국제 103
G. Bersuker, J. Peterson, J. Barnet, J. Sim, R. Choi, B. H. Lee, P. Lysaght, H. R. Huff, “Interfacial layer properties in high-k gate dielectric transistors”, ECS spring meeting, (2005).
국제 102
H.N. Alshareef, K. Choi, H.C. Wen, H. R. Harris, H. Luan, P. Lysaght, P. Majhi, and B. H. Lee, “Gate Work Function Modification Using Ultra-Thin Metal Interlayers”, ECS spring meeting, (2005).
국제 101
S.C.Song, B. H. Lee, Z.Zhang, K.Choi, S.H Bae, H.Alshareef, P.Majhi, H.C.Wen, J.Bennett , B.Sassman, and P. Zeitzoff, “Comparison of MOSFET characteristics between ALD and MOCVD TiN metal gate on Hf silicate”, ECS spring meeting, (2005).
국제 100
P. Srinivasan , N. A. Chowdhury, A. Peralta, D. Misra, R.Choi and B. H. Lee, “Charge Trapping in n-MOSFETs with TiN/HfSixOy/SiO2/p-Si Gate Stack during Substrate Injection”, ECS spring, (2005).
국제 99
S.C.Song, G.Bersuker, B. H. Lee, Z.Zhang, P.Kirsch, P.Majhi, and C.Ramiller, “Recent Development of CMOSFET with Hf-based High-k Dielectric”, ECS spring meeting, (2005), Invited.
국제 98
B. H. Lee, S. C. Song, C.Young, P. Kirsch, R.Choi, P.Lysaght, P.Majhi, G.Bersuker and C.Ramiller, “Challenges in the High-k Dielectric Implementation for 45nm Technology Node”, Proc. of ICICDT, p.73, (2005), Invited.
국제 97
P. Majhi, H.C. Wen, H. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S. C. Song, B. H. Lee, and C. Ramiller, “Evaluation and Integration of Metal Gate Electrodes for Future Generation Dual Metal CMOS”, Proc. of ICICDT, p.69, (2005), Invited.
국제 96
P. Majhi, H. Alshareef, H.-C. Wen, K. Choi, P. Lysaght, C. Huffman, H. Luan, R. Harris, B. H. Lee and C. Ramiller, "On the Structure-Property Inter-Relationships of Metal Gate Electrodes for Future Generation CMOS", ISTC, (2005), Invited.
국제 95
Z.B. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B. H. Lee, “Effects of TiN Overlayer on ALD TaCN Metal Gate/High-k MOSFET Characteristics”, Proc. of DRC, (2005).
국제 94
J.H. Sim, S.C. Song, R. Choi, C.D. Young, G. Bersuker, S.H. Bae, D.L. Kwong and B. H. Lee, “Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode”, Proc. of DRC, (2005).
국제 93
K. Choi, P.Lysaght, Alshareef, H. C. Wen, R. Harris, H. Luan, K.Matthews, P. Majhi, and B. H. Lee, “Growth Mechanism of ALD-TiN and the Thickness Dependence of Work Function”, Proc. of VLSI-TSA, p.103, (2005).
국제 92
P. Majhi, H.C. Wen, K. Choi, H. Alsharee, C. Huffman, and B. H. Lee, “A Systematic Study of the Influence of Nitrogen in Tuning the Effective Work Function of Nitrided Metal Gates ”, Proc. of VLSI-TSA, p.105, (2005).
국제 91
H.C. Wen, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luand, and B. H. Lee, “Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS”, Proc. of VLSI-TSA, p.107, (2005).
국제 90
C.D. Young, R. Choi, J.H. Sim, B. H. Lee, P. Zeitzoff, bY. Zhao, K. Matthews, G.A. Brown, and G. Bersuker, “Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization”, Proc. of IRPS, p.75, (2005).
국제 89
R. Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, “Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices”, Proc. of IRPS, p.80, (2005).
국제 88
R. Choi, R. Harris, B. H. Lee, C.D. Young, J.H. Sim, K. Matthews, M. Pendley and G. Bersuker, “Threshold voltage instability of HfSiO dielectric MOSFET under AC pulsed stress”, Proc. of IRPS, p.634, (2005).
국제 87
R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, “Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack”, Proc. of IRPS, p.636, (2005).
국제 86
J. H. Sim, B. H. Lee, S. C. Song, C. D. Young a, R. Choi, H. Rusty Harris and G. Bersuker, “Hot carrier and cold carrier studies during stress in Hf-silciate NMOS transistors with Poly and TiN gate stack”, Proc. of IRPS, p.638, (2005).
국제 85
M. S. Akbar, N. Moumen, J. Barnett, B. H. Lee and J.C. Lee, “Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology”, Proc. of IRPS, p.640, (2005).
국제 84
S.A. Krishnan, J.J. Peterson, C. Young, G. Brown, R. Choi, R. Harris, J. Sim, B. H. Lee, P. Zeitzoff, P. Kirsch, J.Gutt, H.J. Li, K. Matthews, J.C. Lee, and G. Bersuker, “Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors”, Proc. of IRPS, p.642, (2005).
국제 83
H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young and H. Hwang, “Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric”, Proc. of IRPS, p.646, (2005).
국제 82
S.C.Song, S.H.Bae, Z.Zhang, J.H.Sim, B.Sassman, G.Bersuker, P.Zeitzoff, and B.H.Lee, “Impact of Plasma Induced Damage on PMOSFETs with TiN/Hf-silicate Stack”, Proc. of IRPS, p.398, (2005).
국제 81
J. H. Sim, S.C. Song, P.D. Kirsch,C. D. Young, R. Choi, G. Bersuker, D. L. Kwong and B. H. Lee, “ALD HfO2 thickness dependence on charge trapping characteristics in mobility enhancement”, Proc. of INFOS, p.218, (2005).
국제 80
Y. Senzaki, K.Choi, P. D. Kirsch, P. Majhi, and B. H. Lee, “Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices”, Characterization and Metrology for ULSI technology, (2005), Invited.
국제 79
B.H.Lee, C.D.Young, R.Choi, J.H.Sim, G.Bersuker, C.Y.Kang, R.Harris, G.A.Brown, K.Matthews, S.C.Song, N.Moumen, J.Barnett, P.Lysaght, K.S.Choi, H.C.Wen, C.Huffman, H.Alshareef, P.Majhi, S.Gopalan, J.Peterson, P.Kirsh, H.-J Li, J.Gutt, M.Gardner, H.R.Huff, P.Zeitzoff, R.W.Murto, L.Larson, and C.Ramiller, “Intrinsic characteristics of high-k devices and implications of transient charging effects”, Tech.Dig. of IEDM, p.859, (2004), Invited.
국제 78
C.Y. Kang, R. Choi, J. H. Sim, C. Young, B. H. Lee, G. Bersuker and Jack C. Lee, “Charge Trapping Effects in HfSiON dielectrics on the Ring Oscillator Circuit and the Single Stage Inverter Operation”, Tech Dig. of IEDM, p.485, (2004).
국제 77
C.D. Young, R. Choi, B. H. Lee, G. Bersuker, P. Zeitzoff, J.H. Sim, H.R. Harris, and G.A. Brown, “Characterizing Hf-Based Bulk Film Properties Using Ultra-short Pulse I-V Measurements”, Proc. of SISC, (2004).