구분 번호 제목
국제 176
B. H. Lee,, P.Kirsch, S.Song, R.Choi and R.Jammy, “Gate stack technology for nano-scale devices”, Proceedings of IEEE Nanotech. Mat. And Dev. conf., p.206, (2006), Invited.
국제 175
H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee, “Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates”, ISAGST, (2006).
국제 174
H. Luan, H.-C. Wen, S.C.Song, K. Choi, H.R. Harris, H. Alshareef, C.S. Park, H.B. Park, P. Majhi, and B. H. Lee, “P-Metal Candidate: CVD HfSi Capped with ALD TiN Bi-layer”, ISAGST, (2006).
국제 173
G.Pant, M.J.Kim,B.E.Gnade, R.M. Wallace, M.Queveo-Lopez, S. Krishnan, P.D.Kirsch, B. H. Lee and R. Jammy, “Thickness, Morphology and Mobility: A Study of Hf-based Dielectric Performance”, ISAGST, (2006).
국제 172
P. S. Lysaght, J. C. Woicik, D. A. Fischer, M. A. Sahiner, M. Hartl, R. Hjelm, S. C. Song, B. H. Lee and R. Jammy, “Characterization of Hf-based Dielectric Thin Films via Synchrotron Radiation and Spallation Neutron Sources”, ISAGST, (2006).
국제 171
O. Sharia, A.A. Demkov, G. Bersuker, and B. H. Lee, “Theoretical Study of the Band Alignment at the Oxide/Oxide Interface: HfO2/SiO2”, ISAGST, (2006).
국제 170
D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee, “A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs”, Proc. of ESSDERC, p.387-390, (2006).
국제 169
M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, J. Barnett, H. N. Alshareef , A. Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace and B. H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling”, Proc. of ESSDERC, (2006).
국제 168
B. H. Lee,, C.Y.Kang, T.H.Lee, J.Barnett, R.Choi, S.Song and R .Jammy, “Reliability of thick oxides integrated with HfSiOx gate dielectric”, Ext. Abs. of SSDM, p.1122, (2006).
국제 167
C. S. Park, S. C. Song, G. Bersuker, H.N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, “Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack”, Ext. Abs. of SSDM, p.208, (2006).
국제 166
P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, “Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET”, Ext. Abs. of SSDM, p.388, (2006).
국제 165
C. Y. Kang, R. Choi, S. H. Bae, S. C. Song, M. M. Hussain, C. Young, D. Heh, G. Bersuker and B. H. Lee, “Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics”, Ext. Abs. of SSDM, p.1112, (2006).
국제 164
M. M. Hussain, S. C. Song, C. Y. Kang, M. Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi, B. H. Lee, “Compatibility of ALD HfSiON with Dual Metal Gate CMOS Integration ”, Ext. Abs. of SSDM, p.1114, (2006).
국제 163
H. Park, H.C. Wen, M. Chang, M. Jo, R. Choi, B. H. Lee, S.C.Song, C.Y.Kang, T.Lee, G.Brown, J.C.Lee, and H.Hwang, “Thermal stability of metal electrodes and its impact on gate dielectric characteristics”, Ext. Abs. of SSDM, p.1134 , (2006).
국제 162
B. H. Lee,, P.Kirsch, S.C. Song, R. Jammy, “Strategy to scale Gate stack technology for sub-30nm MOSFETs,” Workshop on gate stack and contact technology for sub-30nm transistor, Monterey, (2006), Invited.
국제 161
S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, , H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, “Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration”, Proc. of symposium on VLSI technology, p.10, (2006).
국제 160
H.N. Alshareef , H.R. Harris, H.C. Wen, C.S. Park, C. Huffman, K. Choi, H.F. Luan, P. Majhi, B. H. Lee and R. Jammy, D.J. Lichtenwalner, J.S. Jur, and A. I. Kingon, “Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric”, Proc. of Symp. on VLSI Tech., p.16, (2006).
국제 159
R. Jammy, K.Choi, P. Kirsch, and B. H. Lee, “Opportunities and challenges in ALD processing for advanced gate stack applications”, Proc. of ALD conference, (2006), Invited.
국제 158
K. Choi, Y. Senzaki, H. Luan, H. Alshareef, H.-C. Wen, R. Harris, C. S. Park, H. Park, P. Majhi, and B. H. Lee, “N-type band edge work function demonstration using PEALD-HfSiN gate electrodes on high-k dielectrics”, Proc. of ALD conference, (2006).
국제 157
R. Choi, C.Y. Kang, S. Krishnan, G. Bersuker, C. Young, D. Heh, P. Kirsch, and B. H. Lee, “Process dependent transient charge trapping behaviors in HfSiO dielectric devices”, Proc. of ALD conference, (2006).
국제 156
S.C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, B. H. Lee, H. H. Tseng, “Non-planar MOSFETs with Tunable Threshold Voltage (Vt) using ALD High-k/Metal Gate Stack”, Proc. of ALD conference, (2006).
국제 155
G. Bersuker, C.S.park, J.Sim, C.Young, R.Choi, B.H.Lee, “Charge trapping effects in high-k transistors”, ECS Trans. 1, p.663, (2006).
국제 154
S.C.Song, Z.Zhang, S.H.Bae, P.Kirsch, R.Choi and B.H.Lee, “High performance metal gate CMOSFETs with aggressively sacled Hf-based high-k,” ECS Trans. 1, p.609, (2006).
국제 153
P.S.Lysaght, J.C.Woicik, B.Foran, J.Barnett, G. Bersuker, B.H.Lee, “ The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films”, ECS Trans. 1, p.313, (2006).
국제 152
P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, “Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, (2006).
국제 151
C. D. Young, R. Choi, D. Heh, A. Neugroschel, H. Park, C.Y. Kang, G.A. Brown, S.C. Song, B. H. Lee and G. Bersuker, “Assessment of Process-Induced Damage in High-κ Transistors”, Proc. of ICICDT, p.1, (2006).
국제 150
G. Thareja, S. J. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J. C. Lee, “Low Work-Function TaN-metal gate with Gadolinium Oxide Buffer Layer on Hf-based Dielectrics”, Proc. of DRC, (2006).
국제 149
H. Park, R. Choi, S. C. Song, M. Chang, C. D. Young, G. Bersuker, B. H. Lee, J.C. Lee and H. Hwang, “Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs”, Proc. of IRPS, p.200 , (2006).
국제 148
G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, J. Gavartin, A. Shluger, R. Choi, B. H. Lee, “Electron Trapping Processes in High-k Gate Dielectrics and Nature of Traps”, VLSI-TSA, (2006).
국제 147
P. D. Kirsch, M. A. Quevedo, G. Pante, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace and B. E. Gnade, “Relationship of HfO2 Materials Properties and Transistor Performance”, VLSI-TSA, (2006).
국제 146
C.D. Young, D. Heh, R. Choi, J.J. Peterson, J. Barnett, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Trap Generation in High-k Gate Stacks by Constant Voltage Stress due to constant voltage stress”, Proc. of VLSI-TSA, (2006).
국제 145
G. Bersuker, C. Young, R. Choi, P. Lysaght, B. H. Lee, “Electron Trapping in N Incorporated Hf-based Gate Stacks”, MRS spring meeting, (2006).
국제 144
H. R.Harris, S.Krishnan, H.C. Wen, H. Alshareef, A.Rao, P. Majhi, R. Choi, B. H. Lee, G. Bersuker and G. Brown, “Reliability Characteristics of Metal/High-κ PMOS with Top Interface Engineered Band Offset Dielectric (BOD)”, Proc. of IRPS, p.661, (2006).
국제 143
S. A. Krishnan, M.Quevedo, H.-J. Li, P.Kirsch, R.Choi, C. Young, J.Peterson, B. H. Lee, G.Bersuker an J.C. Lee, “Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks”, Proc. of IRPS, p.325, (2006).
국제 142
Z.Zhang, M.M. Hussain, S.H.Bae, S.C. Song, and B. H. Lee, “Impact of metal gate wet etch on device characteristics and reliability for dual metal gate high-k CMOSFETs”, Proc. of IRPS, p.388, (2006).
국제 141
C. Y. Kang, R. Choi, S. C. Song, C. D. Young, G. Bersuker, B. H. Lee and J. C. Lee, “Carrier Recombination in High-k Dielectrics and its Impact on Transient Charge Effects in High-k Devices”, Proc. of IRPS, p.657 , (2006).
국제 140
G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, B. H. Lee, “Intrinsic Threshold Voltage Instability of the HfO2 Gate Stack NMOS Transistors”, Proc. of IRPS, p.179 , (2006).
국제 139
C.D. Young, D. Heh, S. Nadkarni, H.R. Harris, R. Choi, J.J. Peterson, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks”, Proc. of IRPS, p.169 , (2006).
국제 138
O. Sharia, A.A.Demkov, G.Bersuker and B. H. Lee e, “Internal dielectric interface: SiO2/HfO2”, the Bulletin of the American Physical Society, (2006).
국제 137
J. Barnett, M. Hussain, J. J. Peterson, P. Kirsch, S.C.Song, C.S.Park, G. Bersuker, B. H. Lee and H. R. Huff, “Surface Preparation Techniques Used for Fabricating High-κ/Metal Gate Device Structures”, ISTC, (2006), Invited.
국제 136
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. Peterson, B. H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, and T.P. Ma, “High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization”, Tech. Dig. of IEDM, p.437, (2005).
국제 135
G. Bersuker, C. S. Park, J. Barnett, P. Lysaght, P. Kirsch, B. H. Lee, P. Lenahan, J. Ryan, J. Greer, A. Korkin, “Modification of interfacial SiO2 layer in high-k gate stacks”, SISC, (2005).
국제 134
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. J. Peterson, B. H. Lee, “Enhanced Reliability In Ultra-Scaled HfSiON Gate Dielectrics Through Suppressed Crystallization”, SISC, (2005).
국제 133
H.N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P.Majhi, and B. H. Lee, “Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes”, SISC, (2005).
국제 132
R. Choi, B. H. Lee, K. Mathur, C.D. Young, G. Bersuker, Y. Zhao , “Fast relaxation behavior and its implication on the measurement in high-k gate dielectric”, SISC, (2005).
국제 131
M.S. Rahman, H. Park, M. Chang, B. H. Lee, R. Choi and H. Hwang, “Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2”, SISC, (2005).
국제 130
M. Chang, M. Jo, H. Park, M.S. Rahman and B. H. Lee, R. Choi, and H. Hwang, “Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient”, SISC, (2005).
국제 129
P. S. Lysaght, J. Barnett, B. Foran, M. Quevedo, P.Kirsch, G.Bersuker, M.Gardner, B. H. Lee and L. Larson, “Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems”, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, (2005).
국제 128
P. D. Kirsch, H.-J. Li, J. Peterson, M. Quevedoc, Y. Senzaki, N. Moumen, S. C. Song and B. H. Lee, “Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability”, AVS ALD symposium, (2005).
국제 127
K. Choi, P. Lysaght, H. Alshareef, H.-C. Wen, R. Harris, H. Luan, P. Majhi, Y. Senzaki, B. H. Lee, S. K. Lee, S.I. Lee, “The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials,” AVS ALD symposium, 2005.