구분 번호 제목
국제 226
W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy, "The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate", Proc. Of Symp. On VLSI Technology, p.56, (2008).
국제 225
C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy, "Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics", Proc. of Int. Rel. Phys. Symp., (2008).
국제 224
J.-W. Yang, H.R.Harris, C.Y. Kang, C.D. Young, K.T. Lee, H.D. Lee, G. Bersuker, B.H. Lee, H.-H. Tseng, R. Jammy, “New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs”, Proc. of Int. Rel. Phys. Symp., (2008).
국제 223
K.T. Lee, C.Y. Kang, O.S. Yoo, C.D. Young, G. Bersuker, B.H. Lee, H.-D. Lee, Y.-H. Jeong, “A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain,” Proc. of IRPS, (2008).
국제 222
K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, G.Y. Yeom,, “Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs,” Proc. of IRPS, (2008).
국제 221
Y. N. Tan, H. C. Wen, C. Park, D. C. Gilmer, C. D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P. D. Kirsch, B. H. Lee, H. H. Tseng and R. Jammy, “Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance”, Proc. of VLSI-TSA, (2008).
국제 220
J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy "Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs", Proc. of VLSI-TSA, (2008).
국제 219
C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy, “Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications”, Proc. of VLSI-TSA, (2008).
국제 218
P. S. Lysaght, J. C. Woicik, M. A. Sahiner, P. D. Kirsch, G. Bersuker, B.-H. Lee and R. Jammy, “Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit,” Proc. of VLSI-TSA, (2008).
국제 217
O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee, “Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 216
Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy, “Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 215
H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy, “Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP”,Tech. Dig. of IEDM, p.57, (2007).
국제 214
S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, “Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, (2007).
국제 213
P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, “Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, (2007).
국제 212
K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong, , “PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics”, discussed at SISC, (2007).
국제 211
J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang, “The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate,” discussed at SISC, (2007).
국제 210
M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy, “Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 209
C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee e, ““Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 208
C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy, “Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007), Invited.
국제 207
W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee, “A Comparative Study of NMOSFETs with HfLaSiON and HfLaON”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 206
Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, B. H. Lee, “Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes,” Ext. Abs. of SSDM, p.14, (2007).
국제 205
C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy, “nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2,” Ext. Abs. of SSDM, p.250, (2007), recognized as a highly notable paper in 2007
국제 204
K.T. Lee, C.Y. Kang, R. Choi, S.C. Song, B. H. Lee, H.-D. Lee and Y.-H. Jeong, “Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs,” Ext. Abs. of SSDM, p.718, (2007).
국제 203
S. C. Song, M. Hussain, J. Barnett, C. S. Park, C. Park, P. Kirsch, and B. H. Lee, “Integration Challenges and Opportunities for Nanometer Scale Dual Metal Gate CMOSFET,” ECS Trans., (2007).
국제 202
C.D. Young, G. Bersuker, D. Heh, R. Choi, C.Y. Kang, J. Tun, and B. H. Lee, “Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks,” ECS Trans., (2007).
국제 201
G. Bersuker, C. Young, D. Heh, R. Choi, B. H. Lee and R. Jammy, “High and low stress voltage instabilities in high-k gate stacks,” ECS Trans. ,8, p.99, (2007).
국제 200
H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, “Determination of Strain in the Silicon Channel Induced by a Metal Electrode”, Microscopy and Microanalysis 2007 Meeting, Fort Lauderdale, Florida, (2007).
국제 199
H.-C. Wen, S.C. Song, C.S. Park, C. Burhamn, G. Bersuker, O. Sharia, A. Demkov, B. S. Ju, M. A. Quevedo-Lopez., H. Niimi, K. Choi, H. B. Park, P. S. Lysaght, P.Majhi, B. H. Lee and R. Jammy, “Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications”, Proc. of Symp. on VLSI Tech.,p.160, (2007).
국제 198
H. Rusty Harris, P. Kalra, P M.ajhi, M. Hussain, D. Kelly, J. Oh, D. Heh, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B. H. Lee, H.-H. Tseng and R. Jammy, “Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme”, Proc. of Symp. on VLSI Tech., p.154, (2007).
국제 197
P. Sivasubramani, T. S. Böscke, J. Huang, C. D.Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R.Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, and R. Jammy, “Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics”, Proc. of Symp. on VLSI Tech., p.68, (2007).
국제 196
S.Govindarajan, T.S.Boscke, P.D.Kirsch, M.A.Quevedo-Lopez, P.Sivasubramini, S.C.Song, R.W.Wallace, B.E.Gande, U.Schroeder, R.Ramanathan, B. H. Lee, R.Jammy, “Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications”, Proc. of VLSI-TSA, (2007), Invited.
국제 195
H.-C. Wen, K. Choi, C. S. Park, P. Majhi ,H.R.Harris, H. Niimi, H.B. Park, G.Bersuker, P. Lysaght, D. L. Kwong, S.C. Song,. B. H. Lee and R. Jammy, “Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off”, Proc. of VLSI-TSA, (2007).
국제 194
C.D. Young, G. Bersuker, F. Zhua, K. Matthews, R. Choi, S.C. Song, H.K. Park, J.C. Lee and B. H. Lee, “Comparison of Plasma-Induced Damage in SiO2/TiN and HfO2/TiN Gate Stacks”, Proc. of IRPS, p.67, (2007).
국제 193
K. Choi, T. Lee, S. Kwon, C. D. Young, H. R. Harris, H.C. Wen, M. Q. Lopeza, H. Park, N. Hiro, C. S. Park, R. Choi, S.C. Song, B. H. Lee, and R. Jammy, “Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode”, Proc. of IRPS, p.374, (2007).
국제 192
B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, “Effect of in situ plasma treatment on high-k films after high-k removal with plasma etching from the S/D region”, Proc. of IRPS, p.672, (2007).
국제 191
K.T. Lee, G.A. Brown, H. Dawei, R. Choi, S.C. Song, B. H. Lee, O.S. Yoo, H.D Lee and Y-H Jeong, “Test Structures for Accurate UHF C-V measurement for Nano-Scale CMOSFETs with HfSiON and TiN Tetal Gate”, ICMTS, (2007).
국제 190
B. H. Lee, B.S Ju, S.C. Song, M. Hussain, J. Barnett, nd R. Jammy, “Process challenges for future gate stack technology”, Semi. Tec. Symposium, Seoul, (2007), Invited.
국제 189
B. H. Lee,, H.C.Wen, S. Song, R.Choi, P. Kirsch, P. Majhi and R. Jammy, “Advances and Challenges in Gate Stack Technology for nano scale CMOS Devices”, Int. Conf. on Microelectronics, (2006).
국제 188
B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, “A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE proces”, IEDM, (2006).
국제 187
H. R.Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B. H. Lee, R. Jammy, “Simplified manufacturable band edge metal gate solution for NMOS without a capping layer”, IEDM, (2006).
국제 186
A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B. H. Lee, R. Jammy, “An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks”, IEDM, (2006).
국제 185
C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy, “A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS”, Tech. Dig. of IEDM, (2006).
국제 184
P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability”, Tech. Dig. of IEDM, (2006)
국제 183
S.A. Krishnan, R. Harris, P.D. Kirsch, C. Krug, M. Quevedo, C.Young, B. H. Lee, R. Choi, N. Chowdhury, S. Thomson, G. Bersuker, and R. Jammy "Performance Enhancement of pMOSFETs with Optimized HfO2/TiN Gate Stack on Si(110) Substrates”, Tech. Dig. of IEDM, (2006).
국제 182
T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U. Schröder, S. Kudelka,P. D. Kirsch, C. Krug, P.Y. Hung, S.C. Song, B.S. Ju, J. Price, G. Pant, B. E. Gnade, W. Krautschneider, B. H. Lee and R. Jammy, “Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM”, Tech. Dig. of IEDM, (2006).
국제 181
G.Bersuker, A.Neugroschel, R.Choi, C.Cochrane, P.Lenahan, D.Heh, C.Young, C.Y.Kang, B. H. Lee and R.Jammy, “NBTI analysis methodology for high-k gate stacks”, discussed at SISC, (2006).
국제 180
H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee, “Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs”, discussed at SISC, (2006).
국제 179
B.S.Ju, S.-C. Song, J. Barnett, B. H. Lee, “A study of high-k removal by plasma etching and its effect on gate dielectric characterization”, 53rd AVS Symp., (2006).
국제 178
B. H. Lee,, S.C. Song, M.Hussain, J.Barnett, R. Jammy, “Challenges in dual workfunction metal gate CMOS integration”, ECS Fall meeting, ECS Trans. 3, (2), p.263, (2006), Invited.
국제 177
R. Choi, D. Heh, C.Y. Kang, C. Young, G. Bersuker, B. H. Lee, “Comparison of novel BTI measurements for high-k dielectric MOSFETs”, ICSICT, (2006).