구분 번호 제목
국제 276
S.S. Park, H.J. Kim, M.L. Choo, J.W. Noh, A.M. Sheri, S.J. Jung, K. Seo, J.B. Park, S.H. Kim, W.T. Lee, J.H. Shin, D.S. Lee, G. Choi, J.Y. Woo, E. Cha, Y.B. Kim, C.J. Kim, U. Chung, M. Jeon, B.G. Lee, B.H. Lee and H. Hwang, “RRAM-based Synapse for Neuromorphic System with Pattern Recognition Function", Tech. Dig. of IEDM, (2012).
국제 275
S.C.Kang, J.H.Yang, E.J.Paek, H.J.Hwang, B.H.Lee, “Optimization of Ferroelectric P(VDF-TrFE) film to Maximize the remanent polarization”, Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2012).
국제 274
H.S. Shin, H.J. Hwang, J. Noh, Y.G. Lee, C. Cho, S.K. Lim and B.H. Lee “Fabrication of suspended graphene cantilever using top down process,” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE),  (2012).
국제 273
J.H. Yang, E.J. Paek, H.J. Hwang, S.C. Kang, B.H. Lee "Piezoelectric characteristics of Au/PVDF-TrFE/Au device", NanoKorea, (2012).
국제 272
B.H.Lee, "Applications of graphen in electronic device," CMOS Emerging Technologies(CMOSET), (2012), Invited
국제 271
Y.G. Lee, C.G. Kang, C. Cho, Y.H. Kim, H.J. Hwang, J.J.Kim, U.J. Jung, E.J.Park, M.W.Kim, B.H. Lee, "Mechanisms of Ambient Dependent Mobility Degradation in the Graphene MOSFETs on SiO2 Substrate," Silicon Nanoworkshop (SNW), (2012).
국제 270
H.J. Hwang, E.J. Paek, J.H. Yang, C.G.Kang, B.H. Lee, "Characteristics of Metal/Ferroelectric(PVDF-TrFE)/Graphene (MFG) Device", Silicon Nanoworkshop (SNW), (2012).
국제 269
B.H.Lee, H.J.Hwang, J.H.Yang, E.J.Paek, "Device Applications of Metal/PVDF-trFE/Graphene Stack," Int. Symp. on Integ. Ferroelectrics (ISIF), (2012), Invited.
국제 268
J.J. Kim, M.Cho, L. Pantisano, T.Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B.H.Lee, “Effects of Gate Process on NBTI Characteristics of TiN Gate FinFET," Int. Reliability Physics Symposium (IRPS), (2012).
국내 267
Y.H.Kim, Y.G.Lee, J.J.Kim, U.Jung, S.C.Song, B.H.Lee, “Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR)", 19th Korea Semiconductor Conference (KSC), (2012).
국내 266
E.J.Park, C.G.Kang, S.K.Lee, C.Cho, Y.G.Lee, H.J.Chung, S.Seo, B.H.Lee, “Effects of SC1 cleaning on the performance of graphene FET", 19th Korea Semiconductor Conference (KSC), (2012).
국제 265
B.H.Lee, “Novel electrical characterization methods for graphene devices", SEMINAR 2012, Hermosillo, Mexicon, (2012), Invited.
국제 264
B.H.Lee, H.J.Hwang, E.J. Paek, Y.G.Lee, C.G.Kang, S.K.Lee, C.Cho, “Applications of Metal/PVDF-trFE/Graphene Devices for Future Electronics," Workshop on Frontiers in Electronics, (2011), Best Poster Paper Award.
국제 263
Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).
국제 262
C.G. Kang, Y.G. Lee, S.K. Lee, E. Park, C.H. Cho, S.K. Lim, H.J. Hwang, B.H. Lee, "Enhancement of electron conduction and reduction of hysteresis for graphene FET by low temperature ALD Al2O3 Passivation", IEEE SISC, (2011).
국제 261
E.J. Paek, H.J. Hwang, J.H. Yang, B.H. Lee, "Novel Pressure Sensitive Touch Sensor using Metal/Piezoelectric/Graphene stack", 2011 GIST/NAIST/NCTU Joint Symposium on Advanced Materials (GNN), (2011)
국제 260
C. Cho, S.K. Lim, C.G. Kang, Y.G. Lee, H.J. Hwang, E.J. Park, and B.H. Lee, “Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.38, (2011).
국제 259
E.J Paek, H.J. Hwang, S.K. Lee, C.G. Kang, C.H. Cho, Y.G. Lee, S.K. Lim, and B.H. Lee, “Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.1331, (2011).
국제 258
B.H.Lee, Y.G.Lee, C.G. Kang, H.J.Hwang, Y.H. Kim, J.J. Kim, U.J. Jung, “Electrical Characterization Methods for graphene MOSFET,” Workshop on Nano and Giga Challenges, Moscow, (2011), Invited.
국제 257
H.J.Hwang, E.J. Paek, H.J.Chung, Sunae Seo, B.H.Lee, "Modulation of Graphene Conductance using Ferroelectric polarization," Nano Korea, (2011), Research Innovation Award.
국제 256
C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).
국제 255
C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, "Variability and Feasibility of CVD Graphene Interconnect", Proc. of VLSI-TSA, (2011).
국내 254
Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Chung, H. Yang, S. Seo and B.H. Lee "Short Pulse Characterization of Hysteric Characteristics of Graphene Field Effect Transistor", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 253
U.J. Jung, Y.G. Lee, J.J. Kim, I. Mejia, A. Salas-Villasenor, M. Quevedo-Lopez, J. Kim and B.H. Lee "A Study on the Electrical Characterization methods for CdS channel MOSFETs", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 252
S.K. Lee, H.J. Hwang, Y.G. Lee, J.J. Kim, C.G. Kang, C.Y. Kang and B.H. Lee, "Reduction of Unwanted External Noises of Low Frequency Noise (1/f noise) Measurement", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 251
C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, "Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 250
H.J.Hwang, C.H.Cho, C.G.Kang, S.K.Lim, S.Y.Lee, E.J.Paek, H.Hwang, B.H.Lee, "Top Gate Graphene Field Effect Transistor on MLG/4H-SiC Substrates," 18th Korean Conference on Semiconductors (KCS), (2011).
국제 249
Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).
국제 248
S.K. Lim, C.H.Cho, S.Y. Lee, H.J.Hwang, C.G. Kang, Y.G. Lee, J. Ahn, and B.H. Lee,"Study of the graphene transfer from graphitized SiC substrate", Ext. Abs. of SSDM, pp.591, (2010).
국제 247
B.H. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, "Feasibility of Mechanical Switch Device using a Graphite Electrode", IMRS, Cancun, (2010), Invited.
국제 246
B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited
국내 245
C.H.Cho, S.H.,Kim, S.K.Lim, S.Y.Lee, H.J.Hwang, H.Hwang, B.H.Lee, "Carbon condensation and Germanium sublimation in GeC films by pulse laser annealing", 17th Korean Conference on Semiconductors (KCS), (2010).
국내 244
H.J.Hwang, S.K.Lim, S.Y.Lee, C.H.Cho, B.H.Lee, "Simplified analytic model for the scaling limit of nano electro mechanical switch devices", 17th Korean Conference on Semiconductors (KCS), (2010).
국제 243
B.H.Lee, “Extreme Low power Technology inspired by Biological Systems”, Semicon Korea, (2010), Invited
국제 242
K.S.Min, C.Y.Kang, C.Park, C.S.Park, B.J.Park, J.B. Park, M.Hussain, J.C.Lee, B.H.Lee, P.Kirsch, H.H. Tseng, R.Jammy, G.Y.Yeom, "A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs", Proc. of Int. Elect. Dev. Meeting, (2009).
국제 241
B.H.Lee, C.H.Cho, H.J.Hwang, S.K. Lim, S.Y. Lee, H.Hwang, "NEMS-CMOS hybrid technology and its applications", NANO Korea, (2009),  Invited.
국제 240
P.D.Kirsch, P.Sivasubramani, J. Huang, C.D.Young, M. A. Quevedo-Lopoez, H. C.Wen, H. Alshareef, K. choi, C.S.Park, K.Freeman, M.M.Hussain, G.Bersuker, H.R.Harris, P. Majhi, R.Choi, P. Lysaght, B.H.Lee, H.-H Tseng, R.Jammy, T. S. Boscke, D. J. Lichtenwalner, J.S.Jur, A. I. Kingon. "Dipole model explaining high-k/metal gate field transistor threshold voltage tuning", Electrochem. Soc. Transaction, 19(1), p.269, (2009), Invited.
국제 239
B.H.Lee, R.Choi, “Dielectric Breakdown Characteristics of Stacked High-k Dielectrics”, Electrochem. Soc. Transaction (ECS), San Francisco, 19(2), p.289, (2009), Invited.
국제 238
B.H.Lee, “Reliability characterization methods for MOSFETs with metal electrode/high-k dielectric stack", Proc. of ICICDT, (2009).
국제 237
B.H.Lee, “Exploratory NEMS-CMOS Hybrid Devices for Post CMOS era", Proc. of ISTC, Electrochem. Soc. Transaction, 18(1), p.857, (2009), Invited.
국제 236
G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy, “Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric,” Proc. of Int. Electron Device Meeting, p.791, (2008).
국제 235
C.Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H.K. Park, G. Bersuker, B.H. Lee, H.S. Choi, K.T. Lee, Y-H. Jeong, J. Lichtenwalner, A.I. Kingon, H-H Tseng, R. Jammy, “The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions", Proc. of Int. Electron Device Meeting, p.115, (2008).
국제 234
W.-H. Choi, H.-M. Kwon*, I.-S. Han*, T.-G. Goo*, M.-K. Na*, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.-D. Lee, R. Jammy, "A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics", Proc. of Int. Electron Device Meeting, p.111, (2008).
국제 233
J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy, "Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application", Proc. of Int. Electron Device Meeting, p.45, (2008).
국제 232
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, “Gate stack technology for nano-scale CMOS devices,”, Int. MRS, Chongging, China, (2008), Invited.
국제 231
K.T.Lee, C.Y.Kang, S.H.Hong, H.S.Choi, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S..Park, S.H..Sagong, S.W.Jung, H.K.Park, H.S.Hwang, B.H.Lee, Y.H.Jeong, “Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, (2008).
국제 230
C.Y. Kang, C.S.Park, H.K.Park, S.C.Song, .R.Choi, B.H.Park, B.Woo, K.T.Lee, J.Lee, H.Hwang, G.Bersuker, B.H.Lee, H.H.Tseng, R.Jammy, "Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric", Ext. Abs. of Symp. On Solid State Device and Materials, p.22, (2008).
국제 229
B.H.Lee, G. Bersuker, D. Heh, H. Park, C.Y. Kang, C. Young, H. Tseng, “Reliability characterization of metal electrode/high-k dielectric stacks for 45nm node beyond ”, Proc. of IWDTF, Tokyo. Japan, (2008), invited.
국제 228
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, “Gate stack technology for nano-scale CMOS devices,”, IWDTF, Tokyo. Japan, (2008), Invited.
국제 227
J. Huang, P.D. Kirsch, J. Oh, S.H. Lee, J. Price, P. Majhi, H.R. Harris, D.C. Gilmer, D.Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C.S. Park, Y.N. Tan, N. Goel, C. Park, P.Y. Hung, P. Lysaght, K.J. Choi, B.J. Cho, H.-H. Tseng, B.H. Lee, R. Jammy, “Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT", Proc. Of Symp. On VLSI Technology, p.92, (2008).