구분 번호 제목
국제 481 Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 480 S.Y.Kim, S.R.Lee, S.M.Kim, Y.S.Lee, H.I.Lee, H.W.Lee, K.Kim, H.J.Hwang, and B.H.Lee*, "A study on the electrical characteristic of ultra-thin oxide semiconductor field-effect transistor" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 479 S.M.Kim, H.I.Lee, S.Y.Kim, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "A Study on the Degradation Mechanism of Vertical Stacked ZnO TFT" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 478 C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "Improving the Responsivity of Graphene/Ge Schottky Junction Infrared Photodetector via Impact Ionization" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 477 H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*, "Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)," Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
국제 476 Kiyung Kim, Sunmean Kim, Yongsu Lee, Daeyeon Kim, So-Young Kim, Seokhyeong Kang, Byoung Hun Lee*, "Extreme Low Power Technology using Ternary Arithmetic Logic Circuits via Drastic Interconnect Length Reduction", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2020)
국제 475 H.W.Lee, S.Y.Kim, S.M.Kim, H.I.Lee, Y.S.Lee, H.J.Hwang and B.H.Lee*, "A study on the atomic layer deposited tin oxide channel for thin film transistor", NANO KOREA, (2020).
국제 474 Y.S.Lee, H.J.Kwon, H.I.Lee, S.Y.Kim, S.M.Kim, K.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of p-type ternary logic device and its circuit application", NANO KOREA, (2020).
국제 473 A.R.Kim, S.Y.Kim and B.H.Lee*, "The study of the operation mechanism for ZnO-based ternary device through electrical analysis", NANO KOREA, (2020).
국제 472 C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang and B.H.Lee*, "Graphene/Ge Schottky junction infrared photodetector with embedded MOS system", NANO KOREA, (2020) Best poster award.
국제 471 S.Y.Kim, K.Kim, A.R.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO", NANO KOREA, (2020).
국제 470 H.J.Kwon, Y.S.Lee, H.J.Hwang and B.H.Lee*, "Effect of introducing polymer buffer layers on the p-type DNTT transistors", NANO KOREA, (2020).
국제 469 M.H.Nguyen, S.M.Kim, H.J.Hwang and B.H.Lee*, "A study of enhancement electrical properties of high-k dielectric grown at low temperature", NANO KOREA, (2020).
국내 468 유태진, 김소영, 김시현, 권민규, 황현준, 이병훈, "화학적 도핑 방법을 이용한 그래핀/p-Si 쇼트키 접합 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 467 이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, "삼진상보보완회로를 위한 그래핀 기반의 P-type 삼진 로직 소자", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 466 김소영, 김소륜, 이호인, 이용수, 김기영, 이해원, 김채은, 황현준, 이병훈, "ZnO 기반 삼진 로직 소자의 중간 전류 레벨 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 465 김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, "화학적 토핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 464 권민규, 유태진, 김시현, 황현준, 이병훈, "Contact Metalontact Metal에 따른 WS2 광검출기의 암전류 감소에 관한 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 463 황현준, 김소영, 이상경, 이병훈, "화학적 도핑에 따른 대면적 그래핀 열전 소자 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 462 이호인, 김소영, 김승모, 이용수, 황현준, 이병훈, "Implementation of pseudo n-type ternary analog to digital converter using ZnO nanosheet stack channel field-effect-transistor", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 461 김시현, 유태진, 권민규, 이용수, 김승모, 황현준, 이병훈, "MOS 커패시터가 내장된 그래핀/Ge 쇼트키 접합 광소자", The 27th Korean Conference of Semiconductors (KCS), (2020)
국내 460 Kiyung Kim, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Low Device Count Ternary Full Adder Using Multi-threshold Graphene Barristor", Nano Convergence Conference (NCC), (2020) Best poster award.
국내 459 Tae Jin Yoo, Wan Sik Kim,Sang Kyung Lee, Cihyun Kim, Min Gyu Kwon, Kyoung Eun Chang, Ji Young Jo and Byoung Hun Lee, "Study on graphene-Bi2Te3 nanowire hybrid photodetector using scanning photocurrent mapping", Nano Convergence Conference (NCC), (2020)
국내 458 Hyeon Jun Hwang, Sang Kyung Lee, So-Young Kim, Byoung Hun Lee, "Electrical characterization of chemically doped graphene Thermoelectric device", Nano Convergence Conference (NCC), (2020)
국제 457 S.Y.Kim, Y.Lee, C.Kim, H.I.Lee, K.Kim, H.J.Hwang, B.H.Lee, "Dual Channel Ternary Graphene Barristor with Tunable Schottky Barrier Height controlled by Chemical Doping", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
국제 456 T.J.Yoo, S.Y.Kim, C.Kim, M.G.Kwon, K.E.Chang, H.J.Hwang, B.H.Lee, "Dark current reduction for the chemically doped graphene/p-Si Schottky photodetector", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
국제 455 B.H.Lee, S.Y. Kim, K.Y.Kim, H.I.Lee,  S.HKang, M.M.Sung, "Recent progress towards ternary logic devices for extreme low power architecture," Presented at Semicondoutor Interface Specialist Conference, 2019. (Invited)
국제 454 Ho-In Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee,  Nguyen van Long, Hyeon Jun Hwang, Myung Mo Sung and Byoung Hun Lee, "Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors ", Nano Korea, (2019)
국제 453 Min Gyu Kwon, Cihyun Kim, Tae Jin Yoo, Kyoung Eun Chang, Hyeon Jun Hwang, Byoung Hun Lee, "Improvement of performance of graphene/Ge photodetector by graphene doping chemical concentration", NANO KOREA,  (2019)
국제 452 Cihyun Kim, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Yongsu Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance improvement of graphene/Ge Schottky junction infrared photodetector with interfacial thin oxide layer", Nano Korea, (2019)
국제 451 Seung-Mo Kim, Yongsu Lee, Sunwoo Heo, Ho-In Lee, Min Gyu Kwon, Hyeon Jun Hwang, and Byoung Hun Lee, "Pure physical defects formation using AFM lithography on graphene channel", NANO KOREA,  (2019)
국제 450 Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)
국제 449
B. Allouche, H. J. Hwang, S. K. Lee, and B. H. Lee, "Operation Mechanism of Ferroelectric Gated Graphene FET", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제 448 Kiyung Kim, Sunwoo Heo, So-Young Kim, and Byoung Hun Lee, "Graphene Barristor Model for Ternary Logic Application", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제 447 Chaeeun Kim, So-Young Kim, Yongsu Lee, Kiyung Kim, Byoung Hun Lee, "Contact Doping Layer for Graphene/DNTT Barristor", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제 446 B.H.Lee, K.E.Chang, C.H. Kim, T.J.Yoo, M.G.Gwon, "High sensitivity and low cost infrared photodetector using a gated graphene/semiconductor heterojunction," presented at European MRS, Nice, France, 2019.
국제 445 So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)
국내 444 김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, "유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 443 권민규, 장경은, 김시현, 김소영, 유태진, 이병훈, "화학적 도핑을 적용한 그래핀-Ge 기반 광검출 소자의 암전류 감소", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 442 이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 441 김민재, 김소영, 이용수, 김승모, 이병훈, "Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 440 김민범, 허선우, 이호인, 김승모, 김채은, 민성욱, 이병훈, "게이트 유전체에 따른 그래핀-ZnO 배리스터의 전기적 특성 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 439 김시현, 장경은, 권민규, 유태진, 이병훈, "Ge 도핑 농도에 따른 그래핀/Ge 쇼트키 접합 광소자의 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019) Best poster award.
국내 438 유태진, 이용수, 이상경, 황현준, 이병훈, "CVD 그래핀의 성장시간에 따른 전기적 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 437 Sunwoo Heo, Kiyung Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Graphene barristor based rectifier for dc level shift", Nano Convergence Conference (NCC), (2019) Best poster award.
국내 436 So-Young Kim, Kyoung Eun Chang, Hyeon Jun Hwang and Byoung Hun Lee, "The study of graphene depending on surface property of substrate", Nano Convergence Conference (NCC), (2019)
국내 435 김기영, 허선우, 이호인, 김승모, 김채은, 이린, 황현준, 성명모, 이병훈, "회로 설계 관전에서의 삼진 논리 소자 최적화 방향 제시", Nano Convergence Conference (NCC), (2019)
국제 434 Yongsu Lee, Sunwoo Heo, Hyeon Jun Hwang, Ho-In Lee, Seung-Mo Kim, Tae Jin Yoo, Byoung Hun Lee, "Nano‐Electro‐Mechanical(NEM) switch and Schmitt trigger application using multilayer graphene", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 433 So-Young Kim, Yongsu Lee, Jae Young Jeong, Seung-Mo Kim, Byoung Hun Lee, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018) Best poster award.
국제 432 Sunwoo Heo, Kiyung Kim, Seung-Mo Kim, Ho-In Lee, Hyeji Lee, So-Young Kim, Byoung Hun Lee, "Insight for optimization of graphene barristor based devices and circuits", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)