구분 번호 제목
국제 453 Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)
국제 452 Min Gyu Kwon, Cihyun Kim, Tae Jin Yoo, Kyoung Eun Chang, Hyeon Jun Hwang, Byoung Hun Lee, "Improvement of performance of graphene/Ge photodetector by graphene doping chemical concentration", NANO KOREA,  (2019)
국제 451 Seung-Mo Kim, Yongsu Lee, Sunwoo Heo, Ho-In Lee, Min Gyu Kwon, Hyeon Jun Hwang, and Byoung Hun Lee, "Pure physical defects formation using AFM lithography on graphene channel", NANO KOREA,  (2019)
국제 450 Cihyun Kim, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Yongsu Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance improvement of graphene/Ge Schottky junction infrared photodetector with interfacial thin oxide layer", Nano Korea, (2019)
국제 449 Ho-In Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee,  Nguyen van Long, Hyeon Jun Hwang, Myung Mo Sung and Byoung Hun Lee, "Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors ", Nano Korea, (2019)
국제 448 Chaeeun Kim, So-Young Kim, Yongsu Lee, Kiyung Kim, Byoung Hun Lee, "Contact Doping Layer for Graphene/DNTT Barristor", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제 447 Kiyung Kim, Sunwoo Heo, So-Young Kim, and Byoung Hun Lee, "Graphene Barristor Model for Ternary Logic Application", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제 446 B.H.Lee, K.E.Chang, C.H. Kim, T.J.Yoo, M.G.Gwon, "High sensitivity and low cost infrared photodetector using a gated graphene/semiconductor heterojunction," presented at European MRS, Nice, France, 2019.
국제 445 So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)
국내 444 권민규, 장경은, 김시현, 김소영, 유태진, 이병훈, "화학적 도핑을 적용한 그래핀-Ge 기반 광검출 소자의 암전류 감소", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 443 유태진, 이용수, 이상경, 황현준, 이병훈, "CVD 그래핀의 성장시간에 따른 전기적 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 442 김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, "유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 441 이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 440 김민범, 허선우, 이호인, 김승모, 김채은, 민성욱, 이병훈, "게이트 유전체에 따른 그래핀-ZnO 배리스터의 전기적 특성 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내 439 김시현, 장경은, 권민규, 유태진, 이병훈, "Ge 도핑 농도에 따른 그래핀/Ge 쇼트키 접합 광소자의 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019) Best poster award.
국내 438 김민재, 김소영, 이용수, 김승모, 이병훈, "Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내 437 So-Young Kim, Kyoung Eun Chang, Hyeon Jun Hwang and Byoung Hun Lee, "The study of graphene depending on surface property of substrate", Nano Convergence Conference (NCC), (2019)
국내 436 Sunwoo Heo, Kiyung Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Graphene barristor based rectifier for dc level shift", Nano Convergence Conference (NCC), (2019) Best poster award.
국내 435 김기영, 허선우, 이호인, 김승모, 김채은, 이린, 황현준, 성명모, 이병훈, "회로 설계 관전에서의 삼진 논리 소자 최적화 방향 제시", Nano Convergence Conference (NCC), (2019)
국제 434 Sunwoo Heo, Kiyung Kim, Seung-Mo Kim, Ho-In Lee, Hyeji Lee, So-Young Kim, Byoung Hun Lee, "Insight for optimization of graphene barristor based devices and circuits", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 433 So-Young Kim, Yongsu Lee, Jae Young Jeong, Seung-Mo Kim, Byoung Hun Lee, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018) Best poster award.
국제 432 Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Yongsu Lee, So-Young Kim, Tae Jin Yoo, Byoung Hun Lee, "Schottky barrier height extraction of p-type semiconductor barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 431 Hyeon Jun Hwang, Billar Allouche, Sang Kyung Lee, Byoung Hun Lee, "Optimization of Hf0.5Zr0.5O2 for graphene/ferroelectric memory FET", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 430 Kiyung Kim, Sunwoo Heo, Sunmean Kim, Seung Mo Kim, Ho-In Lee, Billal Allouche, Seokhyeong Kang, Byoung Hun Lee, "Multi-threshold graphene barristor for standard ternary inverter", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 429 Yongsu Lee, Sunwoo Heo, Hyeon Jun Hwang, Ho-In Lee, Seung-Mo Kim, Tae Jin Yoo, Byoung Hun Lee, "Nano‐Electro‐Mechanical(NEM) switch and Schmitt trigger application using multilayer graphene", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제 428 So-Young Kim, Min Beom Kim, Hyeon Jun Hwang, Billal Allouche, and Byoung Hun Lee, “Ternary graphene field effect transistors using chemically doped graphene”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
국제 427 Seung Mo Kim, Sunwoo Heo, Hyeji Lee, Ho In Lee, Kiyung Kim, Yun Ji Kim, So-Young Kim, Billal Allouche, and Byoung Hun Lee, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
국제 426 B.H.Lee, Y.J.Kim, T.J.Yoo, S.Y.Kim, H.Jun.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," IUMRS-ICAM, Daejon, Korea (2018). Invited
국제 425 Sunwoo Heo, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Kiyung Kim, Tae Jin Yoo, So-Young Kim, Yongsu Lee, Byoung Hun Lee, "Impact of charged impurities on graphene barristor", Nano Korea, (2018).
국제 424 So-Young Kim, Cihyun Kim, Ho-In Lee, Kiyung Kim, Kyoung Eun Chang, Sunwoo Heo, Byoung Hun Lee, "Effect of deposition temperature of ZnO(:N) for electrical characteristic of graphene barristor", Nano Korea, (2018).
국제 423 Yongsu Lee, So-Young Kim, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Sunwoo Heo, Byoung Hun Lee, "Contact resistance properties for Nickel-n-type Silicon using graphene interlayer", Nano Korea, (2018).
국제 422 B.H.Lee, Y.J.Kim. T.J.Yoo, S.Y.Kim, H.J.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," Graphene 2018, Dresden, Germany (2018). Invited
국제 421 S. Y. Kim, H. J. Lee, S. M. Kim, K. Y. Kim, K. E. Chang, S. K. Lee, H. J. Hwang, S. Heo, B. H. Lee, "Device applications of chemically doped graphene," Silicon Nanoworkshop (SNW), (2018).
국제 420 S.C. Kang, S. K. Lee, S. Heo, S. M. Kim, S. K. Lim and B. H. Lee, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics,” to be presented at Int. Rel. Phys. Symp., (2018).
국내 419 김소영, 김민범, 전은기, 정경준, 김윤지, 이병훈, "화학적 도핑 방법을 이용한 그래핀 pn 접합의 형성", The 25th Korean Conference on Semiconductors (KCS), (2018), Best poster award.
국내 418 김민범, 김소영, 이병훈, "UV/오존 노출 후 변화된 그래핀 FET의 전기적 특성 분석", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 417 허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 416 김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 415 황진하, 이상경, 이병훈, "Roll-to-Pate(R2P) 공정 기반의 새로운 3차원 직접 기술 개발 및 수직 전극을 이용한 층 간 연결", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 414 김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 413 김시현, 장경은, 유태진, 권민규, 이병훈, "ZnO top gate를 이용한 그래핀/Ge 쇼트키 접합의 광소자 응용", The 25th Korean Conference on Semiconductors (KCS), (2018), Best poster award.
국내 412 이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 411 이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "전하 주입 층을 이용한 그래핀/DNTT 배리스터의 전기적 특성 조절", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내 410 황현준, 이병훈, "Application of Graphene-ZnO:N barristor with high on/off ratio", Nano Convergence Conference (NCC), (2018)
국내 409 권민규, 장경은, 김시현, 이병훈, "Planarization of Ge surface through Hydrogen annealing for graphene/Ge hybrid device application", Nano Convergence Conference (NCC), (2018)
국내 408 황진하, 이상경, 이병훈, "Development of new 3D integration technology based on Roll-to-Plate process", Nano Convergence Conference (NCC), (2018)
국내 407 이선규, 이병훈, "Effect of multiple deposition method on the morphology and the electrical properties of ALD-grown ZnO film", Nano Convergence Conference (NCC), (2018)
국제 406 S. Y. Kim, Y. J. Kim, H. J. Hwang, S. K. Lee, and B.H.Lee, “Ternary graphene-ZnO barristor using a chemically doped graphene”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제 405 S. C. Kang, S. K. Lee, J. Noh, S. Heo, S. M. Kim, S. K. Lim, and B. H. Lee, “Frequency dependent capacitance due to the stress polarity dependent defects in Metal/high- dielectric/Metal capacitor”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제 404 S. Heo, Y. J. Kim, K. J. Han, K. Y. Kim, H. I. Lee, S. M. Kim, S. K. Lee, K. E. Chang, J. H. Kim, M. H. Yoon, and B.H.Lee, “Low temperature integrated complementary graphene barristor to overcome the thermal budget in monolithic 3D integration”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)