Lee, Sang Kyung (S.K.Lee)

Current Course :

E-mail Address :

Phone Number :

Ph. D. Course

leesk@gist.ac.kr

82-62-715-2347

Research Interest

Graphene based passive device design (for Wireless power transfer)
Graphene photonics
Graphene device fabrication process development
Reliability of semiconductor device
1/f noise characterization measurement of semiconductor and graphene device

Education

2011 – 2018 : Ph.D, Dept. of MSE, Gwangju Institute of Science and Technology (GIST)
2010 – 2011 : M.S., Dept. of DNE, Gwangju Institute of Science and Technology (GIST)
2001 – 2010 : B.S., Dept. of Radio science and engineering, Korea Maritime University (KMU)

Publication

Journals

26	S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee,” Advantages of a buried-gate structure for graphene field-effect transistor ,” in revision, Nanoscale, (2018).
25	S.K.Lim, S.C. Kang, T.J. Yoo, S.K.Lee, B.H.Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” in preparation for publication (2018).
24	K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee, “Gate controlled graphene-silicon Schottky junction photodetector," Small* 14(28), p. 1801182(2018).
23	W.J.Park, S.F.Shaikh, J.W.Min, S.K.Lee, B.H.Lee, M.M. Hussain, “ Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode,” Nanotechnology, 29, p.325202 (2018).
22	S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press, Jpn. J. Appl. Phys.,* 57(4), 05FB02 (2018).
21	T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," ACS Photonics* 5(2), 365-370(2018).
20	J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters* 38, 4, p.521-524 (2017).
19	H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale* 9, p.2442 (2017).
18	Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports* 6, p.39393 (2016).
17	Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer," on-line published, Physica Status Solidi-RRL* (2016).
16	Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters* 37(4), pp.366 (2016).
15	S.K.Lee, Y.J.Kim and B.H.Lee, "Study on future electronic device using graphene", Vacuum Magazine* (2016).
14	C.Cho, S.K.Lee, J.Noh, W.Park S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters*, 106(21), p.213107 (2015).
13	S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee, "Graphene transfer in vacuum yielding a high quality interface," Carbon*, 93, p.286-294 (2015).
12	Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale*
11	C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee, “Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene,” Appl. Phys. Lett.* 104, 161902 (2014).
10	J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device*, 60(11), p.3683 (2013).
9	C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3”, Optics Express*, 21(20), p.23391 (2013).
8	W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology*, 24, 475501 (2013).
7	C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology*, 24, 115707, (2013). , Also selected as article of particular interest.
6	C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors", Carbon*, 53, p.182-187 (2013).
5	S.K. Lee, C.G.Kang, Y.G.Lee, C.Cho, E.J.Park, H.J.Chung, S.Seo, H.D.Lee, B.H. Lee, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices", Carbon*, 50(11), p.2046, Sep. 2012.
4	U. Jung, Y.G.Lee, J.J. Kim, S.K.Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H.Lee, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett.*, 101, 182106, Nov. (2012)
3	S.K.Lee, M.S.Jo, C.W.Sohn, C.Y.Kang, J.C.Lee, Y.H.Jeong, B.H.Lee, "New insight into PBTI evaluation method for nMOSFETs with stacked high-k/IL gate dielectric," IEEE Elect. Dev. Lett.*, Sep. 2012
2	C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett.* 32(11), p.1591, Sep. 2011.
1	C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask,” Nanotechnology*, 22, p.295201, May. 2011.

Conferences

구분	번호	제목
국제	54	B.H.Lee, Y.J.Kim, T.J.Yoo, S.Y.Kin, H.Jun.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," IUMRS-ICAM, Daejon, Korea (2018). *Invited*
국제	53	B.H.Lee, Y.J.Kim. T.J.Yoo, S.Y.Kim, H.J.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," Graphene 2018, Dresden, Germany (2018). Invited
국내	52	황진하, 이상경, 이병훈, "Roll-to-Pate(R2P) 공정 기반의 새로운 3차원 직접 기술 개발 및 수직 전극을 이용한 층 간 연결", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	51	황진하, 이상경, 이병훈, "Development of new 3D integration technology based on Roll-to-Plate process", Nano Convergence Conference (NCC), (2018)
국내	50	이상경, 황현준, 황진하, 이병훈, "Roll-to-plate 기반 양산형 고품질 CVD 그래핀 전사 공정 연구", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
국내	49	황진하, 이상경, 이병훈, "Roll-to-Plate(R2P) 공정 기반의 새로운 3 차원 집적 기술 개발을 위한 유연 기판 적층", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
국내	48	이상경, 황현준, 유태진, 이병훈, "Commercialization of high quality CVD graphene using Roll-to-plate based transfer in vacuum", NANO Convergence Conference (2017).
국내	47	허선우, 심창후, 김윤지, 김소영, 김기영, 이용수, 이상경, 이병훈, "그래핀 고정저항에 의한 그래핀/ZnO:N 배리스터의 동작특성 열화연구", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
국내	46	김윤지, 김소영, 허선우, 심창후, 이상경, 장경은, 이병훈, "그래핀/금속 접합 계면층에 따른 그래핀의 Fermi-level 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
국내	45	김기영, 허선우, 김윤지, 이상경, 강수철, 이병훈, "EOT Scaling of Atomic Layer Deposited HfO2 on Buried-Gate Graphene FET", The 24th Korean Conference on Semiconductors (KCS), 2017
국제	44	T.J.Yoo, Y.H.Kim, S.K.Lee, K.E.Chang, A.N.R.Reza, H.I.Lee, B.H.Lee, “Near Infrared Photon Absorption at Graphene Photodetectors Decorated with Black Phosphorus Flakes", Nano Korea, (2016).
국제	43	K.H. Seo, J.H. Yang, J.A. Yoo, H.J. Hwang, K.E. Chang, C.H. Shim, S.K. Lee, C. Cho, Y.J. Kim, and B.H.Lee, "Barrier height reconfiguration of graphene/ZnO:N barristor using Ferroelectric polymer", IEEE IPFA, (2016) , Best poster award.
국내	42	김윤지, 김소영, 조천흠, 이상경, 장경은, 이병훈, "열처리 조건에 따른 그래핀/금속 접합 변화를 이용한 그래핀 전계효과 소자", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
국내	41	이상경, 조천흠, 유태진, 이호인, A.N.R.Reza, 이병훈, "그래핀 RF 소자의 drain-gate coupling에 의한 다중 신호 공진 현상", 23rd Korean Conference on Semiconductors(KCS), 2016
국내	40	김윤지, 김소영, 정욱진, 박우진, 이상경, 이병훈, "고압수소열처리 조건에 따른 그래핀 전계효과소자의 특성 최적화", 23rd Korean Conference on Semiconductors(KCS), 2016
국내	39	김소영, 김윤지, 이상경, 황현준, 허선우, 장경은, 조천흠, 이병훈, "질소도핑된 ZnO를 이용한 그래핀 FET의 On-Off 특성 향상", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국제	38	K.E.Chang. J.Jung, T.J. Yoo, H.J. Hwang, W.B. Yoo, Y.J. Kim, S.K.Lee, and B.H.Lee, "Gate tunable high photo responsivity due to the unique photo carrier transfer mechanism at graphene/Si interface", SISC (2015)
국제	37	S.K. Lee, U. Jung, C. Cho, T.J. Yoo, A.N.R. Reza, H.I. Lee, and B.H. Lee, "The role of interface charge traps in the RF operation of graphene devices", SISC, (2015)
국제	36	Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
국내	35	이병훈, 장경은, 김윤지, 유태진, 심창후, 김소영, 이상경, "Electronic Device Applications of Graphene", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015) (Invited)
국내	34	유태진, 이상경, A.N.R. Reza, 이호인, 이병훈, “광반응성 향상을 위한 적층형 그래핀 포토디텍터", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015), Best poster award.
국제	33	H.J. Hwang, K.E. Chang, W.B. You, C.H Shim, S.K. Lee, J.H. Yang, C. Cho, S.K. Lim, W. Park, J. Kim, B.H. Lee, "Barrier height modulation at Graphene-ZnO contact using nitrogen doping", Nano Korea, (2015)
국내	32	황현준, 유원범, 장경은, 심창후, 이상경, 양진호, 조천흠, 김윤지, 이병훈, "Nitrogen doping에 따른 Graphene/ZnO:N 접합의 전기적 특성 변화 분석", Materials Research Society of Korea(MRS-K), 2015, Best presentation award.
국내	31	이상경, 김윤지, 정욱진, 김용훈, 유태진, 이병훈, “Buried gate Graphene FET의 게이트 절연막 scaling 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내	30	박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국제	29	W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).
국제	28	W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).
국제	27	C.Cho, S.K.Lee, S.Lee, Y.G.Lee, W.Park, J.Noh, H.J.Hwang, B.H.Lee, “Contact Resistance Modulation using Area to Peripheral Ratio of Graphene Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제	26	Y.J.Kim, S.K.Lee, Y.G.Lee, B.H.Lee, “Influence of O2 Plasma Treatment on Top Gate Graphene Field-effect Transistors", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제	25	Syed M. N. Hasan, S.K.Lee, S.Lee, B.H.Lee, “The Influence of Adhesive Materials on 3D Integrated Graphene-FETs", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제	24	H.N.Choi, S.K.Lee, T.J.Yoo, C.G.Kang, B.H.Lee, “Zero Bias Operation of CVD Graphene Photodetector using Asymmetric Metal Contacts", ” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014)
국제	23	Y.J.Kim, Y.G.Lee, S.Lee, S.K.Lee, K.E.Chang, B.H.Lee, “Influence of final passivation anneal on top gated graphene field-effect transistors", Nano Korea, (2014).
국제	22	S.K.Lee,S.Lee, B.H.Lee, “High quality graphene transfer in vacuum", Nano Korea, (2014) Best poster award
국제	21	T.J.Yoo, C.G.Kang, S.K.Lee, H.N.Choi, B.H.Lee, “Zero bias operation of CVD graphene photodetector with asymmetry metal contact", Nano Korea, (2014).
국제	20	S.K.Lee, S.C.Lee, B.H.Lee, "Towards Three-Dimensional Integration of Two-Dimensional Active Logic Circuits using Low Temperature Multilayer Stacking of GFETs", Proc. of Silicon Nanoworkshop, (2014).
국내	19	이상경, 이상철, 이병훈 “Graphene FET를 이용한 2D 집적 회로의 저온 3D 집적 공정 개발과 분석 ”, The 1^st Korean Graphene Symposium, (2014).
국내	18	김윤지, 이영곤, 강창구, 정욱진, 이상철, 이상경, 이병훈, “Optimization of Integration Process for Stabilized Graphene MOSFET”, 21st Korean Conference on Semiconductors(KCS), 2014.
국내	17	유태진, 강창구, 이상경, 최선희, 이병훈, “Ambient Dependent Photonic Response of Graphene Photodetectors for Optical interconnect”,21st Korean Conference on Semiconductors(KCS), (2014).
국제	16	C.G.Kang, S.H.Choe, S.K.Lee, U.Jung, W.Park, Y.G.Lee, T.J.Yoo, and B.H.Lee, “Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국제	15	W.J. Park, Y.G. Lee, J.J. Kim, S.K. Lee, C.G. Kang, C. Cho, S.K. Lim, U. Jung, W.K. Hong, and B.H.Lee, “Reliability Characteristics of MoS2 FETs”, Int. Conf. on Solid State Device and Materials(SSDM), (2013)
국제	14	S.K. Lee, C.Y. Kang, P. Kirsch, S. Arkalqud, R. Jammy, B.H. Lee, "Comprehensive Study for RF Interference Limited 3D TSV Optimization", Proc. of VLSI-TSA , (2013).
국내	13	장경은, 김진주, 김민우, 이상경, 정욱진, 김용훈, 이영곤, 이병훈, “Temperature effect on the intrinsic reliability of HfxAl1-xOy dielectric”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내	12	강창구, 임성관, 이상철, 이상경, 조천흠, 이영곤, 황현준, 김용훈, 최호준, 최선희, 이병훈, “반도체 배선으로서의 그래핀의 응용”, 20th Korean Conference on Semiconductors(KCS), (2013). Best paper award
국내	11	박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.
국내	10	E.J.Park, C.G.Kang, S.K.Lee, C.Cho, Y.G.Lee, H.J.Chung, S.Seo, B.H.Lee, “Effects of SC1 cleaning on the performance of graphene FET", 19th Korea Semiconductor Conference (KSC), (2012).
국제	9	B.H.Lee, H.J.Hwang, E.J. Paek, Y.G.Lee, C.G.Kang, S.K.Lee, C.Cho, “Applications of Metal/PVDF-trFE/Graphene Devices for Future Electronics," Workshop on Frontiers in Electronics, (2011), Best Poster Paper Award.
국제	8	Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).
국제	7	C.G. Kang, Y.G. Lee, S.K. Lee, E. Park, C.H. Cho, S.K. Lim, H.J. Hwang, B.H. Lee, "Enhancement of electron conduction and reduction of hysteresis for graphene FET by low temperature ALD Al2O3 Passivation", IEEE SISC, (2011).
국제	6	E.J Paek, H.J. Hwang, S.K. Lee, C.G. Kang, C.H. Cho, Y.G. Lee, S.K. Lim, and B.H. Lee, “Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.1331, (2011).
국제	5	C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).

Patents/Book

구분	번호	제목
국제	3	Sang Kyung Lee, Sangchul Lee, Byoung Hun Lee, " Graphene transfer to target substrate using vacuum annealing method ( 진공 열처리를 이용하여 그래핀을 원하는 기판에 전사하는 방법 )", 해외 출원 번호 PCT/KR2015/000085, 2015. (사사:터치융복합클러스터, 글로벌프론티어)
국내	2	Chang Goo Kang, Sang Kyung Lee, Byoung Hun Lee, "그래핀 포토디텍터 및 그 제조 방법 (Graphene photodetector with Al2O3 passivation layer) ", 국내출원 번호 2014-0002154, 2014. (사사:미래융합파이오니어, 글로벌프론티어)
국내	1	Sang Kyung Lee, Sangchul Lee, Byoung Hun Lee, " Graphene transfer to target substrate using vacuum annealing method ( 진공 열처리를 이용하여 그래핀을 원하는 기판에 전사하는 방법 )", 국내 출원 번호 10-2014-0001059, 2013. (사사:터치융복합클러스터, 글로벌프론티어)

Other Expertise

Experience

2011. 09 ~ 2012. 08 – Visiting researcher at UT Austin and SEMATECH
2008. 10 ~ 2009. 08 – Working holiday in Australia
2002. 04 ~ 2004. 07 – Served military service as R.O.K Navy 470th

Technical Skills

Device characterization & Reliability

– DC-IV, Pulse-IV, CV measurement, Low frequency noise measurement, Charge pumping, Solar cell measurement, Raman measurement, High frequency region network analysis.

– Positive Bias Temperature Instability (PBTI)

Semiconductor integration process

– Photolithography, Wet/dry etching process, , High temperature annealing, Metal deposition.

Programming

– C, Matlab 2010b, AVR

Circuit and Antenna simulation

– ADS 2008, HFSS 10

Amateur Radio Engineering

Training

NFC/WPT design using HFSS

– ANSYS (2013.12.11)

Course Work

Master

Device Physics for Nanoscale solid devices
Nanomaterials
Electronic Properties of Materials
Post CMOS Hybrid Device Technology
Electrical characterization for advanced nano-scale devices
Electromagnetics
Microwave Devices and Network
Solid State Electrochemistry

Ph. D

Thin film Technology
Theory of Semiconductor Devices
Nanomaterials for energy saving & sustainability
NT-IT Fusion Technology
Entrepreneurship
Antenna engineering

제목	작성일
[2015-05-13] 보도자료	2015.05.13
[2015-03-28] 성과를 나누는 지식활동	2015.04.27