- Electrical characterization method for semiconductor devices
- Electrical characterization for Graphene FET
- Since 2017 : Ph.D., Dept. of MSE, Gwangju Institute of Science and Technology (GIST)
- 2015 – 2017 : M.S., Dept. of MSE, Gwangju Institute of Science and Technology (GIST)
- 2011 – 2015 : B.S., Dept. Electrical Engineering and Computer Science Concentration, GIST
S.W.Heo, M.G. Jwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor,” Submitted to IEEE Electron Device Letters (2019).
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” on-line published, Solid State Electronics (2019). 10.1016/j.sse.2019.05.006
S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).
S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).
J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press, Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology 29,055202 (2018).
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters 38, 4, p.521-524 (2017).
Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
- Graphene based device fabrication
- Si MOSFETs electrical characterization (current –voltage measurement)
- Capacitance-Voltage measurement (Agilent 4294)
- Charge pumping measurement (pulse generator)
- Cryogenic dI-V measurement
- Semiconductor processing
- Lithography process
- Nano Materials & Devices
- Introduction to mechanics of materials
- Theory of Semiconductor process
- Device physics for nanoscales solid state physics