Kim, Yun Ji (Y.J.Kim)

Current Course :

E-mail Address :

Phone Number :

Integrated M.S.& Ph.D. Course

yjk0825@gist.ac.kr

82-62-715-2816

Research Interest

Stabilization of graphene device
Graphene ternary device

Education

Since 2012 : Integrated M.S & Ph.D Course, Dept. of MSE, GIST
2008 – 2012 : B.S., Dept. of MSE, Hanyang University

Publication

Journals

20	H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,” Nanoscale* 12(32), p.16755(2020).
19	S. Choi, Y.J. Kim, J. Jeon, B.H. Lee, J.H. Cho, S. Lee, "Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)," *ACS Applied Materials and Interfaces* 11(50), pp.47190 (2019).
18	Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H.Ko, J.W.Lee, K.J. Kim, B.H.Lee, Y.M. Song, "Mechanically Robust Antireflective Moth-eye Structures with a tailored coating of dielectric materials,” Optical Materials Express, 9(11), 4178-4186, (2019).
17	S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology* 34, p.055010 (2019).
16	S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee, “ Threshold Voltage Modulation of Graphene-ZnO Barristor Using a Polymer Doping Process,” Advanced Electronic Materials*, 5(7), 1800805, (2019).
15	S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters* 39(12), p.1948 (2018).
14	S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik* ,530(10), p.1800224 (2018).
13	K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee, “Gate controlled graphene-silicon Schottky junction photodetector," Small* 14(28), p. 1801182(2018).
12	S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports* 8(1), pp.2992 (2018).
11	T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," ACS Photonics* 5(2), 365-370(2018).
10	Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology* 29,055202 (2018).
9	Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc.* 6(1), p. 164-168 (2017).
8	Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports* 6, p.39393 (2016).
7	Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering*, v.163, p. 55-59 (2016).
6	S.K.Lee, Y.J.Kim and B.H.Lee, "Study on future electronic device using graphene", Vacuum Magazine* (2016).
5	W.J.Park, Y.H.Kim, U.J. Jung, J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials*, p.1500279 (2015).
4	B.H.Lee, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, “그래핀 소자기술," The Mag. of the IEIE* (2015). (invited)
3	Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale*
2	U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)
1	Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs," Appl. Phys. Lett.* 102(9), 093121 (2013).

Conferences

구분	번호	제목
국제	53	Seung Mo Kim, Sunwoo Heo, Hyeji Lee, Ho In Lee, Kiyung Kim, Yun Ji Kim, So-Young Kim, Billal Allouche, and Byoung Hun Lee, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
국제	52	B.H.Lee, Y.J.Kim, T.J.Yoo, S.Y.Kim, H.Jun.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," IUMRS-ICAM, Daejon, Korea (2018). *Invited*
국제	51	B.H.Lee, Y.J.Kim. T.J.Yoo, S.Y.Kim, H.J.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," Graphene 2018, Dresden, Germany (2018). Invited
국내	50	김소영, 김민범, 전은기, 정경준, 김윤지, 이병훈, "화학적 도핑 방법을 이용한 그래핀 pn 접합의 형성", The 25th Korean Conference on Semiconductors (KCS), (2018), Best poster award.
국내	49	김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	48	이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "전하 주입 층을 이용한 그래핀/DNTT 배리스터의 전기적 특성 조절", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	47	이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)
국제	46	So-Young Kim, Ji-Ae Yoo, Tae Jin Yoo, Yun Ji Kim, Sang Kyung Lee, Byoung Hun Lee, "Control of graphene doping using an interfacial oxide layer", The 4th International Symposium on Hybrid Materials and Processing (HyMaP), (2017)
국내	45	김소영, 김민범, 김윤지, 이혜지, 김기영, 이병훈, "유기박막을 이용한 그래핀 도핑 방법 연구", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
국내	44	이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "그래핀 도핑을 이용한 그래핀/DNTT 접합의 쇼트키 장벽 조절", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
국제	43	Hyeji Lee, Yun Ji Kim, Byoung Hun Lee, "Raman analysis of the doping induced by a metal overlayer on a graphene", Nano Korea, (2017).
국내	42	허선우, 김윤지, 이선규, 노진우, 황현준, 이병훈, "그래핀-ZnO:N 배리스터의 Compact model 설계와 응용", The Korean Society of Semiconductor & Display Technology(KSDT), (2017).
국내	41	김소영, 김윤지, 황현준, 허선우, 한경주, 이선규, 이혜지, 이병훈, "Threshold voltage control of chemically doped graphene barristor", NANO Convergence Conference (2017).
국내	40	허선우, 심창후, 김윤지, 김소영, 김기영, 이용수, 이상경, 이병훈, "그래핀 고정저항에 의한 그래핀/ZnO:N 배리스터의 동작특성 열화연구", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
국내	39	김윤지, 김소영, 허선우, 심창후, 이상경, 장경은, 이병훈, "그래핀/금속 접합 계면층에 따른 그래핀의 Fermi-level 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
국내	38	김시현, 김윤지, 유태진, 장경은, 이병훈, "고압 수소 열처리를 이용한 그래핀 광소자의 성능 개선", The 24th Korean Conference on Semiconductors (KCS), 2017
국내	37	김소영, 김윤지, 심창후, 허선우, 황현준, 한경주, 이선규, 이병훈, "화학적 도핑을 이용한 그래핀 - ZnO:N 배리스터의 문턱전압 조절", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
국내	36	김기영, 허선우, 김윤지, 이상경, 강수철, 이병훈, "EOT Scaling of Atomic Layer Deposited HfO2 on Buried-Gate Graphene FET", The 24th Korean Conference on Semiconductors (KCS), 2017
국제	35	Sunwoo Heo, Sang Kyung Lee, Yun Ji Kim, Byoung Hun Lee, "Impacts of series resistance at top-gate graphene FET", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016)
국제	34	Kyoung Eun Chang, Tae Jin Yoo, Ci hyun Kim, Sang Kyung Lee, Yun Ji Kim, Byoung Hun Lee, "High responsivity Graphene/Ge Schottky junction photodetector using ITO top gate modulation", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016)
국제	33	So-Young Kim, Yun Ji Kim, Chang-Hoo Shim, Jinwoo Noh, Byoung Hun Lee, "Threshold voltage control of graphene barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016), Best poster award.
국제	32	K.H. Seo, J.H. Yang, J.A. Yoo, H.J. Hwang, K.E. Chang, C.H. Shim, S.K. Lee, C. Cho, Y.J. Kim, and B.H.Lee, "Barrier height reconfiguration of graphene/ZnO:N barristor using Ferroelectric polymer", IEEE IPFA, (2016) , Best poster award.
국제	31	C.H.Shim, S.W. Heo, J.W.Noj, Y.J.Kim, S.Y.Kim, A.K.Khan, B.H.Lee, "Design of Ratioless Ternary Inverter using Graphene Barristor", IEEE ISMVL, (2016).
국내	30	김윤지, 김소영, 조천흠, 이상경, 장경은, 이병훈, "열처리 조건에 따른 그래핀/금속 접합 변화를 이용한 그래핀 전계효과 소자", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
국내	29	김윤지, 김소영, 정욱진, 박우진, 이상경, 이병훈, "고압수소열처리 조건에 따른 그래핀 전계효과소자의 특성 최적화", 23rd Korean Conference on Semiconductors(KCS), 2016
국내	28	김소영, 김윤지, 이상경, 황현준, 허선우, 장경은, 조천흠, 이병훈, "질소도핑된 ZnO를 이용한 그래핀 FET의 On-Off 특성 향상", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국내	27	Abdul Karim Khan, Jinwoo Noh, Chang-Hoo Sim, Yun Ji Kim, So-Young Kim and Byoung Hun Lee, "MoS2 Metal insulator transition based modeling of memcapacitor", 23rd Korean Conference on Semiconductors(KCS), 2016
국제	26	K.E.Chang. J.Jung, T.J. Yoo, H.J. Hwang, W.B. Yoo, Y.J. Kim, S.K.Lee, and B.H.Lee, "Gate tunable high photo responsivity due to the unique photo carrier transfer mechanism at graphene/Si interface", SISC (2015)
국제	25	H.J. Hwang, W.B. You, K.E. Chang, C.H Shim, C. Cho, J.H. Yang, Y.J. Kim, S.K. Lim, W.Park, and B.H. Lee, "Graphene barristor with nitrogen doped ZnO for high on/off ratio and wide barrier height modulation", SISC, (2015)
국제	24	U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)
국제	23	Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
국내	22	이병훈, 장경은, 김윤지, 유태진, 심창후, 김소영, 이상경, "Electronic Device Applications of Graphene", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015) (Invited)
국내	21	심창후, 노진우, 김윤지, 김소영, Khan Abdul Karim, 이병훈, “Complementary Graphene Barristor의 설계", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015), Best poster award.
국내	20	박우진, 김윤지, 이병훈, “고압 수소 열처리를 이용한 WS2 전계 효과 트랜지스터의 성능 개선", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015)
국제	19	Y.J. Kim, U. Jung, and B.H. Lee, "Influence of high pressure oxygen annealing on graphene field-effect transistors with Al2O3 passivation layer", IUMRS, (2015)
국제	18	So-Young Kim, Yun Ji Kim, Ukjin Jung, and Byoung Hun Lee, "Fermi Pinning Effects at Metal/High-k Dielectric Stack Integrated for Top Gate Graphene Field Effect Transistors", IUMRS, (2015), Best poster award.
국제	17	So-Young Kim, Yun Ji Kim, Ukjin Jung, Byoung Hun Lee, "Weak Pinning Effects at Metal/High-k Dielectric Stack Integrated for Top Gate Graphene Field Effect Transistors", Nano Korea, (2015), Best poster award.
국내	16	황현준, 유원범, 장경은, 심창후, 이상경, 양진호, 조천흠, 김윤지, 이병훈, "Nitrogen doping에 따른 Graphene/ZnO:N 접합의 전기적 특성 변화 분석", Materials Research Society of Korea(MRS-K), 2015, Best presentation award.
국내	15	이상경, 김윤지, 정욱진, 김용훈, 유태진, 이병훈, “Buried gate Graphene FET의 게이트 절연막 scaling 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내	14	심창후, 노진우, 장경은, 김윤지, 김소영, Abdul Karim Khan, 이병훈, “Graphene Barristor를 이용한 Ternary Inverter”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내	13	박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내	12	강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내	11	정욱진, 김윤지, 김용훈, 김소영, 이병훈, “Top gate graphene FET의 Fermi level과 계면결함 밀도의 상관관계 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015, Best poster award.
국제	10	W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).
국제	9	W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).
국제	8	Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, J.Kim, and B.H.Lee, “Intrinsic mobility of graphene extracted using a modified percolation conduction model,” AVS Texas Chapter Conference, (2014).
국제	7	Y.J.Kim, S.K.Lee, Y.G.Lee, B.H.Lee, “Influence of O2 Plasma Treatment on Top Gate Graphene Field-effect Transistors", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제	6	Y.J.Kim, Y.G.Lee, S.Lee, S.K.Lee, K.E.Chang, B.H.Lee, “Influence of final passivation anneal on top gated graphene field-effect transistors", Nano Korea, (2014).
국제	5	Y.J.Kim, S.C.Lee, Y.G.Lee, C.G.Kang, B.H.Lee, “Optimized Integration Processes to Achieve Highly Stable CVD Graphene FETs," Proc. of Silicon Nanoworkshop, (2014).
국내	4	김윤지, 이상철, 이영곤, 강창구, 이병훈 “Improved Stability of CVD Graphene Field Effect Transistor through Optimization Process”, The 1^st Korean Graphene Symposium, (2014).

Patents/Book

구분	번호	제목
국제	6	이병훈, 김소영, 김윤지, 심창후 "쇼트키 접합 그래핀 반도체를 이용한 삼진 배리스터" US Patent 10,243,076 (2019-03-26) [사사: 글로벌프론티어사업, 미래소재디스커버리 사업]
국제	5	Byoung Hun LEE, Yun Ji KIM, So-Young KIM, " GRAPHENE TRANSISTOR AND TERNARY LOGIC DEVICE USING THE SAME (그래핀 트랜지스터 및 이를 이용한 3진로직 소자) " 해외출원번호, US 15/424154, 2017. [사사: 미래소재디스커버리사업, 정보전자디바이스산업원천기술개발사업]
국내	4	이병훈, 김소영, 김윤지, 심창후 "그래핀-반도체 쇼트키접합을 이용한 터너리 스위치, Ternary switch using a graphene-semiconductor Schottky junction" 국내출원번호, 2016-0150019 (2016.11.11), 2016. [사사: 글로벌프론티어사업, 미래소재디스커버리 사업]
국내	3	이병훈, 김윤지, 김소영, " 그래핀 트랜지스터 및 이를 이용한 3진논리 소자, " 국내출원번호, 10-2016-0015088, 2016. [사사: 창의소재디스커버리사업, 정보전자디바이스산업원천기술개발사업]
국제	2	Byoung Hun Lee, Hyeon Jun Hwang, Yun Ji Kim, " Graphene multi-valued logic device, operation method thereof, and fabrication method thereof ", 해외 출원 번호 : 14/136493 (해외출원) (사사: 미래융합파이오니어, 글로벌 프론티어)
국내	1	Byoung Hun Lee, Hyeon Jun Hwang, Yun Ji Kim, " 그래핀 다치 로직 소자, 이의 동작방법 및 이의 제조방법 ", 국내출원번호 2012-0150200, 국내 등록 번호 1423925, Dec. 2012 (국내출원) (사사: 미래융합파이오니어, 글로벌 프론티어)

Other Expertise

Technical Skills

Labview programming
Electrical characterization of graphene device
Graphene based device fabrication
Photolithography process

Course Work

Master

Organic Materials for Electronics and Photonics Ⅰ
Introduction to Materials Science and Engineering
Device physics for nanoscale and solid state devices
Dielectric properties of materials
Advanced electrical characterization methods fornanoscale devices
Thin Film Technology
Post CMOS Hybrid Device Technology
Advanced Thermodynamics
Solid State Electrochemistry
Venture Creation
Theory of Semiconductor Devices

Ph. D

Entrepreneurship
Solid State Physics
Semiconductor Processing

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제목	작성일
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[2015-05-13] 보도자료	2015.05.13
[2015-03-28] 성과를 나누는 지식활동	2015.04.27
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