| Current Course :
E-mail Address :
Phone Number : |
Ph. D. Course
soocheol@gist.ac.kr
82-62-715-2347 |
- Reliability of high-k MOSFET
- Electric characterization method for semiconductor devices
- Enhancement Ferroelectric properties of PVDF-TrFE
- since 2013 : Ph.D., Dept. of MSE, GIST
- 2011 – 2013 : M.S., Dept. of MSE, GIST
- 2005 – 2011 : B.S., Dept. of Physics, Chonbuk National University
Journals
| 18 |
S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Carbon (2021).
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| 17 |
T.J.Yoo, H.J.Hwang, S.C.Kang, S.W.Heo, H.I.Lee, Y.G.Lee, H.K.Park, S.K.Lee and B.H. Lee*, "Direct defect level analysis for Metal-Insulator-Metal Capacitor using Internal Photoemission Spectroscopy," In revision, J. of EDS (2021).
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| 16 |
S.C. Kang, H.W. Jung, S.J. Chang, S.M. Kim, S.K. Lee, B.H.Lee, H.C. Kim, Y.S. Noh, S.H. Lee, S.I. Kim, H.K. Ahn, J.W. Lim, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Nanomaterials 10(11), p.2116 (2020).
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| 15 |
S.C.Kang, S.K.Lee, S.M.Kim, H.J.Hwang, and B.H. Lee*, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Semiconductor Science and Technology 35(11), p.115025 (2020).
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| 14 |
S.C.Kang, S.Y.Kim, S.K.Lee, K.Y.Kim, B. Allouche, H.J.Hwang, and B.H. Lee*, "Channel defect profiling and passivation for ZnO thin film transistors," Nanomaterials 10(6), pp.1-8 (2020).
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| 13 |
S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics,"IEEE Electron Device Letters 40(11), 171 6(2019).
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| 12 |
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” Solid State Electronics 158, pp.46-50(2019).
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| 11 |
H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
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| 10 |
S.K .Lim, S.C. Kang, T.J. Yoo, S.K. Lee, B.H. Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” Nanomaterials 8(10), p.797(2018).
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| 9 |
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press, Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
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| 8 |
Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
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| 7 |
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters 38, 4, p.521-524 (2017).
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| 6 |
Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
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| 5 |
J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee*, "Sensitivity improvement of graphene/Al2O3/PVDF-TrFE stacked touch device through Al seed assisted dielectric scaling," Microelectronics Engineering, 147, p.79-84 (2015).
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| 4 |
Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
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| 3 |
H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
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| 2 |
W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).
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| 1 |
H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.
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Conferences
| 구분 |
번호 |
제목 |
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국제
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17 |
S.C. Kang, S. K. Lee, S. Heo, S. M. Kim, S. K. Lim and B. H. Lee, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics,” to be presented at Int. Rel. Phys. Symp., (2018).
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국내
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16 |
김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
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국내
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15 |
김기영, 허선우, 김윤지, 이상경, 강수철, 이병훈, "EOT Scaling of Atomic Layer Deposited HfO2 on Buried-Gate Graphene FET", The 24th Korean Conference on Semiconductors (KCS), 2017
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국내
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14 |
강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, "H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
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국내
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13 |
김승모, 정욱진, 임성관, 강수철, 이병훈, "Tunnel FET의 고유한 열화메카니즘에 관한 연구", 23rd Korean Conference on Semiconductors(KCS), 2016
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국내
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12 |
강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈, "FinFET의 Bipolar AC Stress에 의한 Reliability 특성", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
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국제
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11 |
U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)
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국내
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10 |
강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
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국내
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9 |
김용훈, 정욱진, 강수철, 이영곤, 이병훈, “TDR 분석법을 이용한 미세전계효과소자의 Effective Moliblity 추출 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
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국제
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8 |
J.H.Yang, H.J.Hwang, S.C.Kang, W.Park, B.H.Lee, “Stable conductivity modulation of graphene using graphene/Al2O3/metal/piezoelectric polymer/metal stack", Nano Korea, (2014).
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국제
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7 |
J.H. Yang, H.J. Hwang, W.J. Park, S.C. Kang, B.H. Lee, “The modulation of graphene conductivity using piezoelectric polymer and its application to touch devices”, 2013 Joint Symposium on MSE for 21C, 2013
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국제
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6 |
B.H. Lee, H.J.Hwang, J.H.Yang, S.C.Kang, W.J.Park, “Electronic Applications of Graphene/PVDF-TrFE stack”, UKC, (2013), invited.
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국제
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5 |
H.J. Hwang, J.H. Yang, S.C. Kang, C. Cho, C.G.Kang, Y.G. Lee, B.H. Lee, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack," INFOS, (2013).
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국내
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4 |
강수철, 양진호, 황현준, 이병훈, “Enhancement Ferroelectric properties of PVDF-TrFE on graphene electrode”, 20th Korean Conference on Semiconductors(KCS), 2(2013).
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국내
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3 |
박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.
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국제
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2 |
S.C.Kang, J.H.Yang, E.J.Paek, H.J.Hwang, B.H.Lee, “Optimization of Ferroelectric P(VDF-TrFE) film to Maximize the remanent polarization”, Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2012).
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국제
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1 |
J.H. Yang, E.J. Paek, H.J. Hwang, S.C. Kang, B.H. Lee "Piezoelectric characteristics of Au/PVDF-TrFE/Au device", NanoKorea, (2012).
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Experience
- 2006.04~2008.07 Served Military service at R.O.K Air Force
Technical Skills
- Gate dielectric reliability
- Electric characterization of semiconductor devices
- Ferroelectric polymer material device fabrication process
Master
- Introduction to mechanics of materials.
- Semiconductor Memory Device.
- Flexible Electronics : Materials and Applications.
- Compound Semiconductor Device Processing
- Solid State Electrochemistry
- Device physics for nanoscale solid state devices
- Introduction to patents
- Advanced Electrical Characterization Methods for Nano Scale Device
Ph. D
- Venture Creation
- Theory of Semiconductor Devices.
- Entrepreneurship
- Solid state physics
