- Reliability of high-k MOSFET
- Electric characterization method for semiconductor devices
- Enhancement Ferroelectric properties of PVDF-TrFE
- since 2013 : Ph.D., Dept. of MSE, GIST
- 2011 – 2013 : M.S., Dept. of MSE, GIST
- 2005 – 2011 : B.S., Dept. of Physics, Chonbuk National University
S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "HCI Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics," In preparation for IEEE Electron Device Letters (2019).
S.M.Kim, S.W.Heo, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive amplitude modulated discharge current analysis of physical defects in a graphene channel," In preparation for Nano Letters (2019).
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” on-line published, Solid State Electronics (2019). 10.1016/j.sse.2019.05.006
H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
S.K .Lim, S.C. Kang, T.J. Yoo, S.K. Lee, B.H. Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” Nanomaterials 8(10), p.797(2018).
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press, Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters 38, 4, p.521-524 (2017).
Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee*, "Sensitivity improvement of graphene/Al2O3/PVDF-TrFE stacked touch device through Al seed assisted dielectric scaling," Microelectronics Engineering, 147, p.79-84 (2015).
Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).
H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.
- 2006.04~2008.07 Served Military service at R.O.K Air Force
- Gate dielectric reliability
- Electric characterization of semiconductor devices
- Ferroelectric polymer material device fabrication process
- Introduction to mechanics of materials.
- Semiconductor Memory Device.
- Flexible Electronics : Materials and Applications.
- Compound Semiconductor Device Processing
- Solid State Electrochemistry
- Device physics for nanoscale solid state devices
- Introduction to patents
- Advanced Electrical Characterization Methods for Nano Scale Device
- Venture Creation
- Theory of Semiconductor Devices.
- Solid state physics