Heo, Sunwoo (S.Heo)

Current Course :

E-mail Address :

Phone Number :

Ph. D. Course

maxhoewoo@gist.ac.kr

82-62-715-2347

Research Interest

Empirical model development
Digital circuit design
Electrical measurement and analysis

Education

since 2014 : Ph.D, Dept. of MSE, GIST
2012 – 2014 : M.S., Dept. of Physics and Photon Science, GIST
2008 – 2012 : B.S., School of ICE, Inha University

Publication

Journals

16	S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Carbon (2021).
15	T.J.Yoo, H.J.Hwang, S.C.Kang, S.W.Heo, H.I.Lee, Y.G.Lee, H.K.Park, S.K.Lee and B.H. Lee, "Direct defect level analysis for Metal-Insulator-Metal Capacitor using Internal Photoemission Spectroscopy," In revision, J. of EDS* (2021).
14	H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,” Nanoscale* 12(32), p.16755(2020).
13	S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifie,” AIP Advances* 9(9), 095009, (2019).
12	S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology* 34, p.055010 (2019).
11	L. Lee, J.W. Hwang, J.W. Jung, J.C. Kim, H.I. Lee, S.W.Heo, M.H. Yoon, S.Ju. Choi, N.V.Long, J.S. Park, J.W. Jeong, J. Kim, K.R. Kim, D.H.Kim, S.I. Im, B.H.Lee, K.J.Cho, M.M. Sung, "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors," Nature communications 10(1), p.1998 (2019).
10	K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee, “ High-Responsivity Near-Infrared Photodetector Using Gate-modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials*, 5(6), 1800957 (2019).
9	S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters* 39(12), p.1948 (2018).
8	S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik* ,530(10), p.1800224 (2018).
7	F. Ahmed, S.W. Heo, Y.Z. Zheng, F. Ali, C.H. Ra, H.I. Lee, T. Taniguchi, J. Hone, B.H. Lee, W.J. Yoo, “Dielectric dispersion and high field response of multilayer hexagonal boron nitride,"Advanced Functional Materials 28(40), 1804235(2018).
6	K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee, “Gate controlled graphene-silicon Schottky junction photodetector," Small* 14(28), p. 1801182(2018).
5	H.J.Hwang, S. Heo, W.B.Yoo, B.H.Lee, “Electrical performance of graphene-ZnO:N barristor on a flexible polyethylene naphthalate (PEN) film," AIP Advances* 8, pp.015022 (2018).
4	Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," Nanotechnology* 29,055202 (2018).
3	C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon* 123, pp. 307-310(2017).
2	J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters* 38, 4, p.521-524 (2017).
1	C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett.* 32(11), p.1591, Sep. 2011.

Conferences

구분	번호	제목
국제	40	Seung-Mo Kim, Yongsu Lee, Sunwoo Heo, Ho-In Lee, Min Gyu Kwon, Hyeon Jun Hwang, and Byoung Hun Lee, "Pure physical defects formation using AFM lithography on graphene channel", NANO KOREA, (2019)
국제	39	Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)
국제	38	Ho-In Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee, Nguyen van Long, Hyeon Jun Hwang, Myung Mo Sung and Byoung Hun Lee, "Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors ", Nano Korea, (2019)
국제	37	Kiyung Kim, Sunwoo Heo, So-Young Kim, and Byoung Hun Lee, "Graphene Barristor Model for Ternary Logic Application", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
국제	36	So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)
국내	35	김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, "유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내	34	김민범, 허선우, 이호인, 김승모, 김채은, 민성욱, 이병훈, "게이트 유전체에 따른 그래핀-ZnO 배리스터의 전기적 특성 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)
국내	33	이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
국내	32	Sunwoo Heo, Kiyung Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Graphene barristor based rectifier for dc level shift", Nano Convergence Conference (NCC), (2019) Best poster award.
국내	31	김기영, 허선우, 이호인, 김승모, 김채은, 이린, 황현준, 성명모, 이병훈, "회로 설계 관전에서의 삼진 논리 소자 최적화 방향 제시", Nano Convergence Conference (NCC), (2019)
국제	30	Sunwoo Heo, Kiyung Kim, Seung-Mo Kim, Ho-In Lee, Hyeji Lee, So-Young Kim, Byoung Hun Lee, "Insight for optimization of graphene barristor based devices and circuits", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제	29	Kiyung Kim, Sunwoo Heo, Sunmean Kim, Seung Mo Kim, Ho-In Lee, Billal Allouche, Seokhyeong Kang, Byoung Hun Lee, "Multi-threshold graphene barristor for standard ternary inverter", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제	28	Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Yongsu Lee, So-Young Kim, Tae Jin Yoo, Byoung Hun Lee, "Schottky barrier height extraction of p-type semiconductor barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제	27	Yongsu Lee, Sunwoo Heo, Hyeon Jun Hwang, Ho-In Lee, Seung-Mo Kim, Tae Jin Yoo, Byoung Hun Lee, "Nano‐Electro‐Mechanical(NEM) switch and Schmitt trigger application using multilayer graphene", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
국제	26	Seung Mo Kim, Sunwoo Heo, Hyeji Lee, Ho In Lee, Kiyung Kim, Yun Ji Kim, So-Young Kim, Billal Allouche, and Byoung Hun Lee, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
국제	25	So-Young Kim, Cihyun Kim, Ho-In Lee, Kiyung Kim, Kyoung Eun Chang, Sunwoo Heo, Byoung Hun Lee, "Effect of deposition temperature of ZnO(:N) for electrical characteristic of graphene barristor", Nano Korea, (2018).
국제	24	Yongsu Lee, So-Young Kim, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Sunwoo Heo, Byoung Hun Lee, "Contact resistance properties for Nickel-n-type Silicon using graphene interlayer", Nano Korea, (2018).
국제	23	Sunwoo Heo, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Kiyung Kim, Tae Jin Yoo, So-Young Kim, Yongsu Lee, Byoung Hun Lee, "Impact of charged impurities on graphene barristor", Nano Korea, (2018).
국제	22	S. Y. Kim, H. J. Lee, S. M. Kim, K. Y. Kim, K. E. Chang, S. K. Lee, H. J. Hwang, S. Heo, B. H. Lee, "Device applications of chemically doped graphene," Silicon Nanoworkshop (SNW), (2018).
국제	21	S.C. Kang, S. K. Lee, S. Heo, S. M. Kim, S. K. Lim and B. H. Lee, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics,” to be presented at Int. Rel. Phys. Symp., (2018).
국내	20	김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	19	김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	18	이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "전하 주입 층을 이용한 그래핀/DNTT 배리스터의 전기적 특성 조절", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	17	이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)
국내	16	허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
국제	15	S. Heo, Y. J. Kim, K. J. Han, K. Y. Kim, H. I. Lee, S. M. Kim, S. K. Lee, K. E. Chang, J. H. Kim, M. H. Yoon, and B.H.Lee, “Low temperature integrated complementary graphene barristor to overcome the thermal budget in monolithic 3D integration”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국제	14	S. C. Kang, S. K. Lee, J. Noh, S. Heo, S. M. Kim, S. K. Lim, and B. H. Lee, “Frequency dependent capacitance due to the stress polarity dependent defects in Metal/high- dielectric/Metal capacitor”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)
국내	13	이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "그래핀 도핑을 이용한 그래핀/DNTT 접합의 쇼트키 장벽 조절", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
국제	12	S. Heo, Y. J. Kim, C. H. Kim, S. K. Lee, H. J. Lee, H. J. Hwang, J. Noh, B. H. Lee, "Graphene-ZnO:N Schottky junction based thin film transistor," Silicon Nanoworkshop (SNW), (2017).
국내	11	허선우, 김윤지, 이선규, 노진우, 황현준, 이병훈, "그래핀-ZnO:N 배리스터의 Compact model 설계와 응용", The Korean Society of Semiconductor & Display Technology(KSDT), (2017).
국내	10	김소영, 김윤지, 황현준, 허선우, 한경주, 이선규, 이혜지, 이병훈, "Threshold voltage control of chemically doped graphene barristor", NANO Convergence Conference (2017).
국내	9	허선우, 심창후, 김윤지, 김소영, 김기영, 이용수, 이상경, 이병훈, "그래핀 고정저항에 의한 그래핀/ZnO:N 배리스터의 동작특성 열화연구", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
국내	8	김윤지, 김소영, 허선우, 심창후, 이상경, 장경은, 이병훈, "그래핀/금속 접합 계면층에 따른 그래핀의 Fermi-level 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
국내	7	김소영, 김윤지, 심창후, 허선우, 황현준, 한경주, 이선규, 이병훈, "화학적 도핑을 이용한 그래핀 - ZnO:N 배리스터의 문턱전압 조절", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
국내	6	김기영, 허선우, 김윤지, 이상경, 강수철, 이병훈, "EOT Scaling of Atomic Layer Deposited HfO2 on Buried-Gate Graphene FET", The 24th Korean Conference on Semiconductors (KCS), 2017
국제	5	Sunwoo Heo, Sang Kyung Lee, Yun Ji Kim, Byoung Hun Lee, "Impacts of series resistance at top-gate graphene FET", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016)
국제	4	C.H.Shim, S.W. Heo, J.W.Noj, Y.J.Kim, S.Y.Kim, A.K.Khan, B.H.Lee, "Design of Ratioless Ternary Inverter using Graphene Barristor", IEEE ISMVL, (2016).
국내	3	심창후, 서광하, 허선우, 노진우, 김소영, 이병훈, "그래핀 배리스터를 이용한 화소회로 설계", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
국내	2	김소영, 김윤지, 이상경, 황현준, 허선우, 장경은, 조천흠, 이병훈, "질소도핑된 ZnO를 이용한 그래핀 FET의 On-Off 특성 향상", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국제	1	C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, "Variability and Feasibility of CVD Graphene Interconnect", Proc. of VLSI-TSA, (2011).

Patents

구분	번호	제목
국내	1	노진우, 허선우, 이병훈, 이영곤, "시간-도메인 반사 측정 신호를 이용한 고주파대역 정전용량 추출 방법, 장치 및 이를 구현하는 컴퓨터로 읽을 수 있는 기록 매체," 국내특허 (사사: SK 하이닉스)

Other Expertise

Experience

2012.01.30~2012.02.24, LUNO(Laboratory of Ultrafast and Nonlinear Optics), GIST, Intern.
2011.01.10~2011.07.08, OPERA(Optics and Photonics Elite Research Center), Inha University, Intern researcher. (Research field : Surface Plasmon Polariton in FDTD Simulation)
2010.01.01~2010.02.26, KyungBong Corporation, Intern (Bus Information System)
IT특성화 차세대 반도체 모듈(Digital System Design) 이수, 인하대학교. (with 구 하이닉스)

Technical Skills

Fabrication of emerging device based on semiconductor and two-dimensional material for integrated circuit
– Photolithography, ALD, Sputter, E-beam & thermal evaporation, RTA, CVD
Integrated circuit design, fabrication, and analysis
Electronic characterization of the devices
– Current-voltage measurement(Semiconductor parameter analyzer)
– Capacitance measurement (Impedance analyzer, Time domain reflectometry measurement)
– Reliability (TDDB, TZDB, BTI, and so on)
– Band alignment measurement (Internal photoemission spectroscopy)
Compact model design and circuit simulation
– Sub-circuit SPICE modeling of emerging device and circuit simulation for hardware implementation

Laser induced annealing and diagnosis
– Manufacture of littrow-type LD/Solid/Liquid Laser
– Laser induced plasma diagnosis and annealing for graphene growth
– Nonlinear optical experiment
– Pump probe spectroscopy
Programming
– C++/C language, Matlab, Mathmatica, SPICE, and Verilog HDL

Training

Laser Safety Training

Course Work

Master

Electromagnetics
Advanced Electromagnetics
Solid State Physics
Plasma Physics
Modern Quantum Physics
Optics and Lasers
Special Topics in Photonics
Fiber Optics
Ultrafast Optics
Introduction to spectroscopy

Ph.D

Laser Physics
Mathematical Analysis
Understand and application of optical components and materials

Notice

제목	작성일
[KBS 시사기획 창] 인터뷰	2019.08.23
[전자신문] 팔만대장경과 반도체	2019.08.23
[2015-05-13] 보도자료	2015.05.13
[2015-03-28] 성과를 나누는 지식활동	2015.04.27
Homepage renewal (EXEL 멤버 필독)	2015.03.26

Research Interest

Education

Publication

Journals

Conferences

Patents

Other Expertise

Experience

Technical Skills

Course Work

Master

Ph.D

Notice

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