
Current Course :
E-mail Address : Phone Number : |
Ph. D. Course
82-62-715-2814 |
Current Course :
E-mail Address : Phone Number : |
Ph. D. Course
82-62-715-2814 |
6 |
S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, and T. Lee, " Flexible organic solar cells of P3HT:PCBM using chemically doped graphene electrodes", Nanotechnology, 23, p.344013 (2012)
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5 |
S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, “Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19), 192110, (2011)
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4 |
Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang, "Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications", Microelectronic Eng., 86, p.1929~1932, (2009)
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3 |
Seungjae Jung, Man Chang ,Seonghyun Kim, Joonmyung Lee, Chunhum Cho, Choongman Lee, Hyunsang Hwang, "Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application", Microelectronic Eng. 86, 200907, p.1812~1814, (2009)
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2 |
Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang, "The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications", Microelectronic Eng., 86, p.1933~1935, (2009)
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1 |
Minseok Jo, Seonghyun Kim, Chunhum Cho, Man Chang, and Hyunsang Hwang, "Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride", Appl. Phys. Lett., 94, 053505, (2009)
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구분 | 번호 | 제목 | |
국제 | 1 |
Kim, S., Jo, M., Jung, S., Choi, H., Lee, J., Chang, M., Cho, C., Hwang, H., “Effect of high pressure hydrogen annealing on silicon nanowire MOSFET devices with multi-channel wires,” in International Semiconductor Device Research Symposium, 2009
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