“W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping,” Ext. Abs. of SSDM, 2003 2014년 9월 2일/카테고리: Conferences /작성자: exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-02 11:01:332014-09-02 11:01:36 “W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping,” Ext. Abs. of SSDM, 2003
