https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-09-02 15:47:592014-09-02 15:48:02“ The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films,” ECS Trans. 1, p.313, 2006.