“Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode,” Ext. Abs. of Symp. on Solid State Device and Materials, 2005.

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다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
“Forming gate oxide having multiple thickness,” U.S. patent No. 7,160,771, 2007.
“CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture ,” US…
“Triple layer hard mask for gate patterning to fabricate scaled transistor,” US patent No.6800530, 2004
“ Integration of dual workfunction metal gate CMOS devices,” US patent No. 6653698, 2003.
"Apparatus and methods for wafer debonding using a liquid jet,” US patent No.5783022, 1998.