“Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics,” Ext. Abs. of Symp. on SSDM, 2005. (Invited)

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다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
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“Triple layer hard mask for gate patterning to fabricate scaled transistor,” US patent No.6800530, 2004
“ Integration of dual workfunction metal gate CMOS devices,” US patent No. 6653698, 2003.
"Apparatus and methods for wafer debonding using a liquid jet,” US patent No.5783022, 1998.