“On the Structure-Property Inter-Relationships of Metal Gate Electrodes for Future Generation CMOS,” ISTC 2005. (Invited)

/카테고리: /작성자:
다음의 항목 또한 추천합니다.
"Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application", Proc. of Int. Electron Device…
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“Gate stack technology for nano-scale CMOS devices,”, IWDTF, Tokyo. Japan, 2008. (Invited)
"The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With…
“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a…
"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs", Proc. of VLSI-TSA, 2008.