“N-type band edge work function demonstration using PEALD-HfSiN gate electrodes on high-k dielectrics”, Proc. of ALD conference, 2006.

/카테고리: /작성자:
다음의 항목 또한 추천합니다.
“Forming gate oxide having multiple thickness,” U.S. patent No. 7,160,771, 2007.
“CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture ,” US…
“Characterization of ultra-thin dielectric using time domain reflectometry" presented at Int. Workshop on Dielectric Thin Films. (IWDTF)…
“Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, presented at…
“Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, presented at Int. Workshop on…
“Reliability characteristics of MoS2 FETs,” Int. Conf. on Solid State Device and Materials(SSDM), 2013.