“Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, presented at Int. Workshop on Dielectric Thin Films. (IWDTF) , 2013.

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다음의 항목 또한 추천합니다.
“Optimized Integration Processes to Achieve Highly Stable CVD Graphene FETs," Proc. of Silicon Nanoworkshop, (2014).
"Monitoring of interfacial reactions using discharging current from graphene FETs," presented at IEEE SISC, Washington, Dec. 2013.
“Characterization of ultra-thin dielectric using time domain reflectometry" presented at Int. Workshop on Dielectric Thin Films. (IWDTF)…
“Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, presented at Int. Workshop on…
“Reliability characteristics of MoS2 FETs,” Int. Conf. on Solid State Device and Materials(SSDM), 2013.
“Electrical characterization of Graphene Field Effect Transistor”, UKC, Aug. 2013 (invited).