https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-09-02 10:24:442014-09-02 10:24:48"Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE),” Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona, 2000