“Impact of metal gate wet etch on device characteristics and reliability for dual metal gate high-k CMOSFETs”, Proc. of IRPS, p.388, 2006.

/카테고리: /작성자:
다음의 항목 또한 추천합니다.
“Characterization of ultra-thin dielectric using time domain reflectometry" presented at Int. Workshop on Dielectric Thin Films. (IWDTF)…
“Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, presented at…
“Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, presented at Int. Workshop on…
“Reliability characteristics of MoS2 FETs,” Int. Conf. on Solid State Device and Materials(SSDM), 2013.
“Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR) ," Korea Semiconductor Conference (KSC),…
“Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials, p.1331, 2011.