“High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation,” Proceeding of Symposium VLSI Technology, p.15, 2001. (Highlight session paper) 2014년 9월 2일/카테고리: Conferences /작성자: exelDownlli https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-02 10:42:172014-09-02 10:42:21“High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation,” Proceeding of Symposium VLSI Technology, p.15, 2001. (Highlight session paper)
