“Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient,” SISC, 2005.

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다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
“Forming gate oxide having multiple thickness,” U.S. patent No. 7,160,771, 2007.
“CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture ,” US…
“Sub-10nm1T-1R Cell Design using HfOx based ReRAM Cell”, Proc. of VLSI-TSA, April, 2013.
“Dielectric Breakdown characteristics of stacked high-k dielectrics”, ECS, San Francisco, May, 2009. , Electrochem. Soc. Transaction, 19(2),…
“Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric,” Proc. of Int.…