“Dopant penetration effects on polysilicon gate HfO2 MOSFET,” Proceeding of VLSI Symposium, p.131, 2001 2014년 9월 2일/카테고리: Conferences /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-02 10:40:172014-09-02 10:40:20 “Dopant penetration effects on polysilicon gate HfO2 MOSFET,” Proceeding of VLSI Symposium, p.131, 2001
