https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-09-02 14:49:442014-09-02 14:49:50“Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices,” Proc. of IRPS, p.80, 2005.