“Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å),” Tech Dig. of Int. Electron Device Meetings, p.61, 2000.

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다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
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"Apparatus and methods for wafer debonding using a liquid jet,” US patent No.5783022, 1998.