“Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices,” Characterization and Metrology for ULSI technology, 2005. (Invited)

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다음의 항목 또한 추천합니다.
“Characterization of ultra-thin dielectric using time domain reflectometry" presented at Int. Workshop on Dielectric Thin Films. (IWDTF)…
“Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, presented at…
“Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, presented at Int. Workshop on…
“Reliability characteristics of MoS2 FETs,” Int. Conf. on Solid State Device and Materials(SSDM), 2013.
“Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials, p.1331, 2011.
“Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel,” Ext. Abs. of Solid State…