“Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, 2006. 2014년 9월 2일/카테고리: Conferences /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-02 15:48:492014-09-02 15:48:59“Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, 2006.
