“Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes,” Ext. Abs. of SSDM, p.14, 2007.

/카테고리: /작성자:
다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
“Forming gate oxide having multiple thickness,” U.S. patent No. 7,160,771, 2007.
“CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture ,” US…
“Triple layer hard mask for gate patterning to fabricate scaled transistor,” US patent No.6800530, 2004
“ Integration of dual workfunction metal gate CMOS devices,” US patent No. 6653698, 2003.
"Apparatus and methods for wafer debonding using a liquid jet,” US patent No.5783022, 1998.