“Process dependent N/PBTI characteristics of TiN Gate finFET,” IEEE Elect. Dev. Lett.,33(7), p.937, Jul. 2012. 2014년 9월 1일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-01 11:18:402014-09-01 11:18:42"Process dependent N/PBTI characteristics of TiN Gate finFET," IEEE Elect. Dev. Lett.,33(7), p.937, Jul. 2012.