“Low Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric,” IEEE Electron Dev. Lett., 30(5), p.523, May. 2009. 2014년 9월 1일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-01 10:06:332014-09-01 10:06:39 “Low Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric,” IEEE Electron Dev. Lett., 30(5), p.523, May. 2009.