“Investigation of Random Telegraph Noise in Gate Induced Drain Leakage (GIDL) and Gate Edge Direct Tunneling (EDT) Currents of High-k MOSFETs,” IEEE Trans. on Elect. Dev., 57(4), p.913, Apr. 2010.

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다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
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