“Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition,” Jpn. J. Appl. Phys. 48, p.116506 , Nov. 2009. 2014년 9월 1일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-09-01 10:15:562014-09-01 10:16:00 “Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition,” Jpn. J. Appl. Phys. 48, p.116506 , Nov. 2009.
