“The effect of nano-scale non-uniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008. 2014년 8월 29일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-08-29 17:29:402014-08-29 17:29:46“The effect of nano-scale non-uniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008.