https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-08-29 17:32:132014-08-29 17:32:19“Stress-polarity-independent negative threshold voltage shift in HfO2/TiN P-channel metal oxide semiconductor field-effect transistor ,” Jpn. J. Appl. Phys., Part 1: 47 (1), pp. 136-138, 2008.