https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-08-29 17:50:562014-08-29 17:50:59“Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93, 161913, Oct. 2008.