https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-08-29 15:59:532014-08-29 15:59:59“Improved Gate-Edge Profile of Metal/High-k Gate Stack Using a NH3 Ashing Process in Gate-First CMOSFETs”, Electrochem. and Solid-State Lett. 9, G4, 2006