“Evaluation of tantalum silicon alloy system as gate electrodes,” Appl. Phys. Lett. 87, p.212110, 2005

/카테고리: /작성자:

download

다음의 항목 또한 추천합니다.
"Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning",Electrochem. Soc. Transaction, 19(1), p.269, 2009. (Invited)
"Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application", Proc. of Int. Electron Device…
"The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With…
“Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a…
“New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs,” Proc. of Int. Rel. Phys. Symp., 2008.
“Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit,” Proc. of VLSI-TSA, 2008.