” Electrical characteristics of highly reliable Hafnium oxide gate dielectric,” IEEE Electron Dev. Lett., 21,p.181, 2000 2014년 8월 29일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-08-29 11:17:092014-08-29 11:17:12" Electrical characteristics of highly reliable Hafnium oxide gate dielectric,” IEEE Electron Dev. Lett., 21,p.181, 2000