https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-08-29 16:51:352014-08-29 16:51:41 "Effect of F2 Post-Metallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric", IEEE Elec. Dev. Lett., 28, p.21, 2007.