“Effect of aluminum incorporation on band alignment at the SiO2/HfO2 interface”, Phys. Rev. B, 77, p.1, 2008.

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다음의 항목 또한 추천합니다.
"Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning",Electrochem. Soc. Transaction, 19(1), p.269, 2009. (Invited)
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“Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric,” Proc. of Int.…
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“Gate stack technology for nano-scale CMOS devices,”, IWDTF, Tokyo. Japan, 2008. (Invited)